參數資料
型號: RF1K49086
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 3.5A, 30V, Avalanche Rated, Dual N-Channel LittleFET⑩ Enhancement Mode Power MOSFET
中文描述: 3.5 A, 30 V, 0.132 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
文件頁數: 4/7頁
文件大?。?/td> 195K
代理商: RF1K49086
5-60
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. r
DS(ON)
FOR VARYING CONDITIONS OF GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED r
DS(ON)
vs JUNCTION
TEMPERATURE
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
0
5
10
15
0
1.0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2.0
3.0
4.0
5.0
V
GS
= 3V
20
25
V
GS
= 4V
I
D
,
V
GS
= 10V
V
GS
= 20V
V
GS
= 4.5V
V
GS
= 5V
PULSE DURATION = 250
μ
s, T
A
= 25
o
C
0.0
3.0
4.5
6.0
7.5
1.5
0
5
10
15
20
25
150
o
C
PULSE TEST
PULSE DURATION = 250
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
-55
o
C
25
o
C
50
100
150
200
250
0
6.0
4.0
7.0
5.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
D
,
)
I
D
= 0.5A
3.0
8.0
9.0
10.0
PULSE DURATION = 250
μ
s, V
DD
= 15V
I
D
= 1.75A
I
D
= 3.5A
I
D
= 7.0A
0.0
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 250
μ
s, V
GS
= 10V, I
D
= 3.5A
-80
-40
0
40
80
120
160
0.0
0.5
1.0
1.5
2.0
N
T
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= 250
μ
A
RF1K49086
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