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參數(shù)資料
| 型號(hào)： | RF1K49086 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 3.5A, 30V, Avalanche Rated, Dual N-Channel LittleFET⑩ Enhancement Mode Power MOSFET |
| 中文描述： | 3.5 A, 30 V, 0.132 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 195K |
| 代理商： | RF1K49086 |
S E M I C O N D U C T O R
5-57
Power MOSFET Data Sheets
January 1997
RF1K49086
3.5A, 30V, Avalanche Rated, Dual N-Channel
LittleFET Enhancement Mode Power MOSFET
Features
3.5A, 30V
r
DS(ON)
= 0.060
Temperature CompensatingPSPICE Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
Description
The RF1K49086 Dual N-Channel power MOSFET is manu-
factured using an advanced MegaFET process. This pro-
cess, which uses feature sizes approaching those of LSI
integrated circuits, gives optimum utilization of silicon, result-
ing in outstanding performance. It is designed for use in
applications such as switching regulators, switching convert-
ers, motor drivers, relay drivers, and low voltage bus
switches. This device can be operated directly from inte-
grated circuits.
Formerly developmental type TA49086.
Symbol
Packaging
JEDEC MS-012AA
LittleFET is a trademark of Harris Corporation
Ordering Information
PART NUMBER
PACKAGE
BRAND
RF1K49086
MS-012AA
RF1K49086
NOTE: When ordering, use the entire part number. For ordering in
tape and reel, add the suffix 96 to the part number, i.e. RF1K4908696.
G1(2)
D1(8)
D1(7)
S1(1)
D2(6)
D2(5)
S2(3)
G2(4)
BRANDING DASH
1
2
3
4
5
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
Harris Corporation 1997
File Number
3986.4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RF1K49088 | Dual N-Channel power MOSFET(雙路N溝道功率MOS場(chǎng)效應(yīng)管) |
| RF1K49088 | 3.5A, 30V, Avalanche Rated, Logic Level, Dual N-Channel LittleFET⑩ Enhancement Mode Power MOSFET |
| RF1K4909096 | TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 12V V(BR)DSS | 3.5A I(D) | SO |
| RF1K49090 | 3.5A, 12V, 0.050 Ohm, Logic Level, Dual N-Channel LittleFET⑩ Power MOSFET |
| RF1K49090 | Dual N-Channel power MOSFET(雙路N溝道功率MOS場(chǎng)效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RF1K4908696 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 3.5A I(D) | SO |
| RF1K4908696136 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1K49088 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:3.5A, 30V, 0.06 Ohm, Logic Level, Dual N-Channel LittleFET⑩ Power MOSFET |
| RF1K4908896 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 3.5A I(D) | SO |
| RF1K49090 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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