參數(shù)資料
型號: RF1K49088
廠商: HARRIS SEMICONDUCTOR
元件分類: JFETs
英文描述: Dual N-Channel power MOSFET(雙路N溝道功率MOS場效應管)
中文描述: 3.5 A, 30 V, 0.06 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
文件頁數(shù): 1/7頁
文件大?。?/td> 173K
代理商: RF1K49088
8-94
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
LittleFET is a trademark of Intersil Corporation. PSPICE is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RF1K49088
3.5A, 30V 0.06 Ohm, Logic Level, Dual
N-Channel LittleFET Power MOSFET
This Dual N-Channel power MOSFET is manufactured using
an advanced MegaFET process. This process, which uses
feature sizes approaching those of LSI integrated circuits,
gives optimum utilization of silicon, resulting in outstanding
performance. It is designed for use in applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and low voltage bus switches. This product
achieves full rated conduction at a gate bias in the 3V - 5V
range, thereby facilitating true on-off power control directly
from logic level (5V) integrated circuits.
Formerly developmental type TA49088.
Features
3.5A, 30V
r
DS(ON)
= 0.060
Temperature Compensating PSPICE
Model
On-Resistance vs Gate Drive Voltage Curves
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC MS-012AA
Ordering Information
PART NUMBER
PACKAGE
BRAND
RF1K49088
MS-012AA
RF1K49088
NOTE: When ordering, use the entire part number. For ordering in
tape and reel, add the suffix 96 to the part number, i.e., RF1K4908896.
G1(2)
D1(8)
D1(7)
S1(1)
D2(6)
D2(5)
S2(3)
G2(4)
BRANDING DASH
1
2
3
4
5
Data Sheet
August 1999
File Number
3952.5
相關PDF資料
PDF描述
RF1K49088 3.5A, 30V, Avalanche Rated, Logic Level, Dual N-Channel LittleFET⑩ Enhancement Mode Power MOSFET
RF1K4909096 TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 12V V(BR)DSS | 3.5A I(D) | SO
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RF1K49090 Dual N-Channel power MOSFET(雙路N溝道功率MOS場效應管)
RF1K4909296 TRANSISTOR | MOSFET | PAIR | COMPLEMENTARY | 12V V(BR)DSS | 3.5A I(D) | SO
相關代理商/技術參數(shù)
參數(shù)描述
RF1K4908896 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 3.5A I(D) | SO
RF1K49090 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RF1K4909096 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RF1K49092 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RF1K4909296 功能描述:MOSFET USE 512-FDS9934C RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube