參數(shù)資料
型號： RD38F1020C0ZTL0
廠商： INTEL CORP
元件分類： 存儲器
英文描述： 3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye
中文描述： SPECIALTY MEMORY CIRCUIT, PBGA66
封裝： 8 X 10 MM, 1.20 MM HEIGHT, SCSP-66
文件頁數(shù)： 42/70頁
文件大小： 1223K
代理商： RD38F1020C0ZTL0
3VoltIntel
Advanced+BootBlockFlashMemoryStacked-CSPFamily
42
Datasheet
7.2.1
F-RP#ConnectedtoSystemReset
TheuseofF-RP#duringsystemresetisimportantwithautomatedprogram/erasedevicessincethe
systemexpectstoreadfromtheflashmemorywhenitcomesoutofreset.IfaCPUresetoccurs
withoutaflashmemoryreset,properCPUinitializationwillnotoccurbecausetheflashmemory
maybeprovidingstatusinformationinsteadofarraydata.IntelrecommendsconnectingF-RP#to
thesystemCPURESET#signaltoallowproperCPU/flashinitializationfollowingsystemreset.
SystemdesignersmustguardagainstspuriouswriteswhenF-V
CC
voltagesareaboveV
LKO
.Since
bothF-WE#andF-CE#mustbelowforacommandwrite,drivingeithersignaltoV
IH
will
inhibit
writestothedevice.TheCUIarchitectureprovidesadditionalprotectionsincealterationof
memorycontentscanonlyoccuraftersuccessfulcompletionofthetwo-stepcommandsequences.
ThedeviceisalsodisableduntilF-RP#isbroughttoV
IH
,regardlessofthestateofitscontrol
inputs.
Byholdingthedeviceinreset(F-RP#connectedtosystemPowerGood)duringpower-up/down,
invalidbusconditionsduringpower-upcanbemasked,providingyetanotherlevelofmemory
protection.
7.2.2
F-V
CC
,F-V
PP
andF-RP#Transition
TheCUIlatchescommandsasissuedby
systemsoftwareandisnotalteredbyF-V
PP
orF-CE#
transitionsorWSMactions.Itsdefaultstateuponpower-up,afterexitfromresetmodeorafter
F-V
CC
transitionsaboveV
LKO
(Lockoutvoltage),isreadarraymode.
Afteranyprogramorblockeraseoperationiscomplete(evenafterF-V
PP
transitionsdownto
V
PPLK
),theCUImustberesettoreadarraymodeviatheReadArraycommandifaccesstothe
flashmemoryarrayisdesired.
NOTE:
1.AresistorcanbeusediftheF-V
CC
supplycansinkadequatecurrentbasedonresistorvalue.
Figure12.ExamplePowerSupplyConfigurations
V
CC
V
PP
12VFastProgramming
AbsoluteWriteProtectionWithV
PP
≤
V
PPLK
SystemSupply
12VSupply
10
≤
K
V
CC
V
PP
SystemSupply
12VSupply
LowVoltageand12VFastProgramming
V
CC
V
PP
SystemSupply
Prot#
(LogicSignal)
V
CC
V
PP
SystemSupply
Low-VoltageProgramming
Low-VoltageProgramming
AbsoluteWriteProtectionviaLogicSignal
(Note1)
相關(guān)PDF資料
PDF描述
RD38F1010C0ZBL0 CAPACITOR, BESTCAP 33 MILLI FARAD 7V CAPACITOR, BESTCAP 33 MILLI FARAD 7V; CAPACITANCE:33MF; VOLTAGE RATING, DC:7V; CAPACITOR DIELECTRIC TYPE:ELECTRONIC; SERIES:BESTCAP; TEMP, OP. MAX:75(DEGREE C); TEMP, OP. MIN:-20(DEGREE C); RoHS Compliant: Yes
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RD38F1020C0ZTL0A 制造商:Micron Technology Inc 功能描述:32C/8S SCSP 3.0 - Trays
RD38F1020C0ZTL0B 制造商:Micron Technology Inc 功能描述:32C/8S SCSP 3.0 - Tape and Reel
RD38F1020C0ZTL0SB93 功能描述:IC FLASH 32MBIT 70NS 66EBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:1M (64K x 16) 速度:150ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤
RD38F1020W0YBQ0 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:Wireless Flash Memory (W18/W30 SCSP)
RD38F1020W0YBQ0SB93 功能描述:IC FLASH 32MBIT 65NS 66EBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:576 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040
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