參數(shù)資料
型號： RD38F1020C0ZBL0
廠商： INTEL CORP
元件分類： 存儲器
英文描述： 3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye
中文描述： SPECIALTY MEMORY CIRCUIT, PBGA66
封裝： 8 X 10 MM, 1.20 MM HEIGHT, SCSP-66
文件頁數(shù)： 23/70頁
文件大?。?/td> 1223K
代理商： RD38F1020C0ZBL0
3VoltIntel
Advanced+BootBlockFlashMemoryStacked-CSPFamily
Datasheet
23
4.0
PowerandResetConsiderations
4.1
Power-Up/DownCharacteristics
Inordertopreventanyconditionthatmayresultinaspuriouswriteoreraseoperation,itis
recommendedtopower-upF-V
CC
,F-V
CCQ
andS-V
CC
together.Conversely,F-V
CC
,F-V
CCQ
and
S-V
CC
mustpower-downtogether.Itisalsorecommendedtopower-upF-V
PP
withorslightlyafter
F-V
CC
.Conversely,F-V
PP
mustpowerdownwithorslightlybeforeF-V
CC
.
IfF-V
CCQ
and/orF-V
PP
arenotconnectedtotheF-V
CC
supply,thenF-V
CC
shouldattainF-
V
CC
MinbeforeapplyingF-V
CCQ
andF-V
PP
.Deviceinputsshouldnotbedrivenbeforesupply
voltage=F-V
CC
Min.PowersupplytransitionsshouldonlyoccurwhenF-RP#islow.
4.2
AdditionalFlashFeatures
Intel3VoltAdvanced+Stacked-CSPproductsprovidein-systemprogramminganderaseinthe
1.65 V–3.3 Vrange.Forfastproductionprogramming,italsoincludesalow-cost,backward-
compatible12 Vprogrammingfeature.
4.2.1
Improved12 VoltProductionProgramming
WhenF-V
PP
isbetween1.65 Vand3.3 V,allprogramanderasecurrentisdrawnthroughthe
F-V
CC
signal.NotethatifF-V
PP
isdrivenbyalogicsignal,V
IH
min=1.65 V.Thatis,F-V
PP
must
remainabove1.65 Vtoperformin-systemflashmodifications.WhenF-V
PP
isconnectedtoa12 V
powersupply,thedevicedrawsprogramanderasecurrentdirectlyfromtheF-V
PP
signal.This
eliminatestheneedforanexternalswitchingtransistortocontrolthevoltageF-V
PP
.
Figure12,
“ExamplePowerSupplyConfigurations”onpage 42
showsexamplesofhowtheflashpower
suppliescanbeconfiguredforvarioususagemodels.
The12 VF-V
PP
modeenhancesprogrammingperformanceduringtheshortperiodoftime
typicallyfoundinmanufacturingprocesses;however,itisnotintendedforextendeduse.12 Vmay
beappliedtoF-V
PP
duringprogramanderaseoperationsforamaximumof1000cyclesonthe
mainblocksand2500cyclesontheparameterblocks.F-V
PP
maybeconnectedto12 Vforatotal
of80hoursmaximum.Stressingthedevicebeyondtheselimitsmaycausepermanentdamage.
4.2.2
F-V
PP
≤
V
PPLK
forCompleteProtection
Inadditiontotheflexibleblocklocking,theF-V
PP
programmingvoltagecanbeheldlowfor
absolutehardwarewriteprotectionofallblocksintheflashdevice.WhenF-V
PP
isbelowV
PPLK
,
anyprogramoreraseoperationwillresultinaerror,promptingthecorrespondingstatusregisterbit
(SR.3)tobeset.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RD38F1020C0ZBL0SB93 功能描述:IC FLASH 32MBIT 70NS 66EBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:1M (64K x 16) 速度:150ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應商設(shè)備封裝:48-TSOP 包裝:托盤
RD38F1020C0ZTL0 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye
RD38F1020C0ZTL0A 制造商:Micron Technology Inc 功能描述:32C/8S SCSP 3.0 - Trays
RD38F1020C0ZTL0B 制造商:Micron Technology Inc 功能描述:32C/8S SCSP 3.0 - Tape and Reel
RD38F1020C0ZTL0SB93 功能描述:IC FLASH 32MBIT 70NS 66EBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:1M (64K x 16) 速度:150ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應商設(shè)備封裝:48-TSOP 包裝:托盤
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