參數(shù)資料
型號(hào)： RD28F3204C3B70
廠商： INTEL CORP
元件分類： 存儲(chǔ)器
英文描述： TVS BIDIRECT 400W 18V SMA
中文描述： SPECIALTY MEMORY CIRCUIT, PBGA66
封裝： 8 X 10 MM, 1.20 MM HEIGHT, SCSP-66
文件頁(yè)數(shù)： 1/70頁(yè)
文件大小： 1223K
代理商： RD28F3204C3B70
3VoltIntel
Advanced+BootBlock
FlashMemory(C3)Stacked-ChipScale
PackageFamily
Datasheet
ProductFeatures
The3VoltIntel
Advanced+BootBlockFlashMemory(C3)Stacked-ChipScalePackage
(Stacked-CSP)devicedeliversafeature-richsolutionforlow-powerapplications.TheC3
Stacked-CSPmemorydeviceincorporatesflashmemoryandstaticRAMinonepackagewith
lowvoltagecapabilitytoachievethesmallestsystemmemorysolutionform-factortogetherwith
high-speed,low-poweroperations.TheC3Stacked-CSPmemorydeviceoffersaprotection
registerandflexibleblocklockingtoenablenextgenerationsecuritycapability.Combinedwith
theIntel
FlashDataIntegrator(Intel
FDI)software,theC3Stacked-CSPmemorydevice
providesacost-effective,flexible,codeplusdatastoragesolution.
■
FlashMemoryPlusSRAM
—ReducesMemoryBoardSpace
Required,SimplifyingPCBDesign
Complexity
■
Stacked-ChipScalePackage(Stacked-
CSP)Technology
—SmallestMemorySubsystemFootprint
—Area:8x10mmfor16Mbit(0.13μm)
Flash+2Mbitor4MbitSRAM
—Area:8x12mmfor32Mbit(0.13μm)
Flash+4Mbitor8MbitSRAM
—Height:1.20mmfor16Mbit(0.13μm)
Flash+2Mbitor4MbitSRAMand
32Mbit(0.13um)Flash+8MbitSRAM
—Height:1.40mmfor32Mbit(0.13μm)
Flash+4MbitSRAM
—ThisFamilyalsoincludes0.25μmand
0.18μmtechnologies
■
AdvancedSRAMTechnology
—70nsAccessTime
—LowPowerOperation
—LowVoltageDataRetentionMode
■
Intel
FlashDataIntegrator(FDI)
Software
—Real-TimeDataStorageandCode
ExecutionintheSameMemoryDevice
—FullFlashFileManagerCapability
■
Advanced+BootBlockFlashMemory
—70nsAccessTimeat2.7V
—Instant,IndividualBlockLocking
—128bitProtectionRegister
—12VProductionProgramming
—UltraFastProgramandEraseSuspend
—ExtendedTemperature–25°Cto+85°C
■
BlockingArchitecture
—BlockSizesforCode+DataStorage
—4-KwordParameterBlocks(fordata)
—64-KbyteMainBlocks(forcode)
—100,000EraseCyclesperBlock
■
LowPowerOperation
—AsyncReadCurrent:9mA(Flash)
—StandbyCurrent:7μA(Flash)
—AutomaticPowerSavingMode
■
FlashTechnologies
—0.25μmETOXVI,0.18μmETOX
VIIand0.13μmETOXVIIIFlash
Technologies
—28F160xC3,28F320xC3
252636-001
February,2003
Notice:
Thisdocumentcontainsinformationonnewproductsinproduction.Thespecifications
aresubjecttochangewithoutnotice.VerifywithyourlocalIntelsalesofficethatyouhavethelat-
estdatasheetbeforefinalizingadesign.
相關(guān)PDF資料
PDF描述
RD28F1602C3B70 TVS 400W 20V UNIDIRECT SMA
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RD28F1602C3B90 TVS UNIDIRECT 400W 90V SMA
RD28F3208C3B90 TVS BIDIRECT 400W 90V SMA
RD28F3208C3T70 3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RD28F3204C3T70 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye
RD28F3204W30B70 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
RD28F3204W30B85 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
RD28F3204W30T70 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
RD28F3204W30T85 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
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