參數(shù)資料
型號(hào)： RD28F6408W30T70
廠商： INTEL CORP
元件分類： 存儲(chǔ)器
英文描述： 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
中文描述： SPECIALTY MEMORY CIRCUIT, PBGA80
封裝： 14 X 8 MM, 0.80 MM PITCH, STACK, CSP-80
文件頁(yè)數(shù)： 67/82頁(yè)
文件大?。?/td> 749K
代理商： RD28F6408W30T70
28F6408W30, 28F3204W30, 28F320W30, 28F640W30
Preliminary
61
Appendix B Flowcharts
Figure 30. Programming Flowchart
Suspend
Program
Loop
Start
Write 40h,
Word Address
Write Data
Word Address
Read Status
Register
SR.7 =
Full Status
Check
(if desired)
Program
Complete
FULL STATUS CHECK PROCEDURE
Suspend
Program
Read Status
Register
Program
Successful
SR.3 =
SR.1 =
0
0
SR.4 =
0
1
1
1
1
0
No
Yes
V
PP
Range
Error
Device
Protect Error
Program
Error
WORD PROGRAM PROCEDURE
SR.3 MUST be cleared before the Write State Machine will
allow further program attempts
Only the Clear Staus Register command clears SR.1, 3, 4.
If an error is detected, clear the status register before
attempting a program retry or other error recovery.
Standby
Standby
OpBus
Check SR.3
1 = V
PP
error
Check SR.4
1 = Data program error
Comments
Repeat for subsequent programming operations.
Full Status register check can be done after each program or
after a sequence of program operations.
Write FFh after the last operation to enter read array mode.
Comments
OpBus
Data = 40h
Addr = Location to program (WA)
Write
Program
Setup
Data = Data to program (WD)
Addr = Location to program (WA)
Write
Data
Status register data. Toggle CE# or
OE# to update Status register
Read
Check SR.7
1 = WSM ready
0 = WSM busy
Standby
Standby
Check SR.1
1 = Attempted program to locked block
Program aborted
PGM_WRD.WMF
Program Word
Data/ Confirm
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