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參數(shù)資料
| 型號(hào)： | RD28F3208C3T90 |
| 廠商： | INTEL CORP |
| 元件分類： | 存儲(chǔ)器 |
| 英文描述： | 3 VOLT INTEL Advanced+ Boot Block Flash Memory (C3) Stacked-Chip ScalPackage Familye |
| 中文描述： | SPECIALTY MEMORY CIRCUIT, PBGA66 |
| 封裝： | 8 X 10 MM, 1.20 MM HEIGHT, SCSP-66 |
| 文件頁(yè)數(shù)： | 10/70頁(yè) |
| 文件大?。?/td> | 1223K |
| 代理商： | RD28F3208C3T90 |
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3VoltIntel
Advanced+BootBlockFlashMemoryStacked-CSPFamily
10
Datasheet
F-WP#
INPUT
FLASHWRITEPROTECT:
Controlsthelock-downfunctionoftheflexibleLockingfeature.
WhenF-WP#isalogiclow,thelock-downmechanismisenabled
andblocksmarkedlock-
downcannotbeunlockedthroughsoftware.
WhenF-WP#islogichigh,thelock-downmechanismisdisabled
andblockspreviously
locked-downarenowlockedandcanbeunlockedandlockedthroughsoftware.AfterF-WP#goes
low,anyblockspreviouslymarkedlock-downreverttothatstate.
See
Section7.0,“SystemDesignConsiderations”onpage 41
fordetailsonblocklocking.
F-VCC
SUPPLY
FLASHPOWERSUPPLY:
[2.7 V–3.3 V]Suppliespowerfordevicecoreoperations.
F-VCCQ
SUPPLY
FLASHI/OPOWERSUPPLY:
[2.7 V–3.3 V]SuppliespowerfordeviceI/Ooperations.
S-VCC
SUPPLY
SRAMPOWERSUPPLY:
[2.7 V–3.3 V]Suppliespowerfordeviceoperations.
See
Section7.2.2,“F-VCC,F-VPPandF-RP#Transition”onpage 42
fordetailsofpower
connections.
F-VPP
INPUT/
SUPPLY
FLASHPROGRAM/ERASEPOWERSUPPLY:
[1.65 V–3.3 Vor11.4 V–12.6 V]Operatesasan
inputatlogiclevelstocontrolcompleteflashprotection.Suppliespowerforacceleratedflash
programanderaseoperationsin12 V
±
5%range.Thisballcannotbeleftfloating.
Lower
F-
V
PP
≤
V
PPLK
,toprotectallcontentsagainstProgramandErasecommands.
SetF-V
= F-V
forin-systemread,programanderaseoperations.
Inthisconfiguration,
F-V
candropaslowas1.65 Vtoallowforresistorordiodedropfromthesystemsupply.Note
thatifF-V
isdrivenbyalogicsignal,V
IH =
1.65 V.Thatis,F-V
PP
mustremainabove1.65 Vto
performin-systemflashmodifications.
RaiseF-V
to12V
±
5%forfasterprogramanderaseinaproductionenvironment.
Applying
12 V
±
5%toF-V
canonlybedoneforamaximumof1000cyclesonthemainblocksand2500
cyclesontheparameterblocks.
F-V
PP
maybeconnectedto12 Vforatotalof80hoursmaximum.
F-VSS
SUPPLY
FLASHGROUND:
Forallinternalcircuitry.Allgroundinputs
must
beconnected.
S-VSS
SUPPLY
SRAMGROUND:
Forallinternalcircuitry.Allgroundinputs
must
beconnected.
NC
NOTCONNECTED:Internallydisconnectedwithinthedevice.
Table2. 3VoltIntel
Advanced+BootBlockStacked-CSPBallDescriptions(Sheet2of2)
Symbol
Type
NameandFunction
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| RD28F6408W30B70 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) |
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