国产精品无码AV在线毛片,高潮迭起AV乳颜射后入

您好，
買賣IC網(wǎng)歡迎您。
請(qǐng)登錄
免費(fèi)注冊(cè)

您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄372037 > RC40-36 PDF資料下載

型號(hào)：	RC40-36
文件頁數(shù)：	568/1328頁
文件大?。?/td>	9519K
代理商：	RC40-36

PRODUCT SPECIFICATION

Two MOSFETs in Parallel

For high current requirements, we recommend that two

MOSFETs be used in parallel instead of one single MOS-

FET. Significant advantages are realized using two MOS-

FETs in parallel:

Significant reduction of power dissipation

Maximum current of 14A with one MOSFET:

)(Duty Cycle)

)(3.3+0.4)/(5+0.4-0.35)

With two MOSFETs in parallel:

)(Duty Cycle)

(0.037*)(3.3+0.4)/(5+0.4-0.35)

increases with temperature. Assume R

can easily increase to 0.050W at high temperature when

using a single MOSFET. When using two MOSFETs in parallel, the

temperature effects should not cause the R

to rise above the listed

maximum value of 37mW.

Less heat sink required.

With power dissipation down to around one watt and with

MOSFETs mounted flat on the motherboard, there will be

considerably less heat sink required. The junction-to-case

thermal resistance for the MOSFET package (TO-220) is

typically at 2

C/W and the motherboard serves as an

excellent heat sink.

Higher current capability.

With thermal management under control, this on-board

DC-DC converter is able to deliver load currents up to

14.5A with no problem at all.

MOSFET Gate Bias

The MOSFET can be biased by one of two methods: Charge

Pump and 12V Gate Bias.

Method 1. Charge pump (or Bootstrap) method

Figure 5 employs a charge pump to provide gate bias. Capac-

itor CP is the charge pump deployed to boost the voltage of

the RC5041 output driver. When the MOSFET switches off,

the source of the MOSFET is at -0.6V. VCCQP is charged

through the Schottky diode to 4.5V. Thus, the capacitor CP is

charged to 5V. When the MOSFET turns on, the source of

the MOSFET voltage is equal to 5V. The capacitor voltage

follows, and hence provides a voltage at VCCQP equal to

10V. The Schottky is required to provide the charge path

when the MOSFET is off. The Schottky reverses bias when

the VCCQP goes to 10V. The charge pump capacitor, CP,

needs to be a high Q and high frequency capacitor. A 1

ceramic capacitor is recommended here.

Figure 5. Charge Pump Configuration

Method 2. 12V Gate Bias

Figure 6. 12V Gate Bias Configuration

Figure 7 uses an external 12V source to bias VCCQP. A 47

resistor is used to limit the transient current into the VCCQP

F capacitor filter is used to filter the VCCQP sup-

ply. This method provides a higher gate bias voltage to the

MOSFET, and therefore reduces the R

and resulting

power loss within the MOSFET. Figure 8 illustrates how

decreases dramatically as V

increases. A 6.2V

Zener (DS2) is used to clamp the voltage at V

maximum of 12V and ensure that the absolute maximum

voltage of the IC will not be exceeded.

Figure 7. R(DS) vs. V

for Typical MOSFETs

相關(guān)PDF資料	PDF描述
RC40-58
RC5010
RC5011
RC5011DB
RC5031

相關(guān)代理商/技術(shù)參數(shù)	參數(shù)描述
RC4042-632-SS-20	制造商:MISC. SPCR/STNDF/HND 功能描述:
RC40-58	制造商:未知廠家制造商全稱:未知廠家功能描述:
RC4077	制造商:未知廠家制造商全稱:未知廠家功能描述:
RC4097	制造商:未知廠家制造商全稱:未知廠家功能描述:SERIES
RC410M-L-DF	制造商:Micro-Star International 功能描述:MSI RC410M-L - Bulk

發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

(若只采購一條型號(hào)，填寫一行即可)

*型號(hào)	*數(shù)量	廠商	批號(hào)	封裝

采購需求

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

我的聯(lián)系方式

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)