參數(shù)資料
型號: RC28F256P33T85A
廠商: NUMONYX
元件分類: PROM
英文描述: 16M X 16 FLASH 3V PROM, 85 ns, PBGA64
封裝: BGA-64
文件頁數(shù): 36/96頁
文件大?。?/td> 1378K
代理商: RC28F256P33T85A
November 2007
Datasheet
Order Number: 314749-05
41
Numonyx StrataFlash Embedded Memory (P33)
8.0
Power and Reset Specifications
8.1
Power-Up and Power-Down
Power supply sequencing is not required if VPP is connected to VCC or VCCQ. Otherwise
VCC and VCCQ should attain their minimum operating voltage before applying VPP.
Power supply transitions should only occur when RST# is low. This protects the device
from accidental programming or erasure during power transitions.
8.2
Reset Specifications
Asserting RST# during a system reset is important with automated program/erase
devices because systems typically expect to read from flash memory when coming out
of reset. If a CPU reset occurs without a flash memory reset, proper CPU initialization
may not occur. This is because the flash memory may be providing status information,
instead of array data as expected. Connect RST# to the same active low reset signal
used for CPU initialization.
Also, because the device is disabled when RST# is asserted, it ignores its control inputs
during power-up/down. Invalid bus conditions are masked, providing a level of memory
protection.
Table 21: Power and Reset
Num
Symbol
Parameter
Min
Max
Unit
Notes
P1
tPLPH
RST# pulse width low
100
-
ns
1,2,3,4
P2
tPLRH
RST# low to device reset during erase
-
25
s
1,3,4,7
RST# low to device reset during program
-
25
1,3,4,7
P3
tVCCPH
VCC Power valid to RST# de-assertion (high)
130nm
90
-
1,4,5,6
VCC Power valid to RST# de-assertion (high)
65nm
300
-
Notes:
1.
These specifications are valid for all device versions (packages and speeds).
2.
The device may reset if tPLPH is < tPLPH MIN, but this is not guaranteed.
3.
Not applicable if RST# is tied to Vcc.
4.
Sampled, but not 100% tested.
5.
When RST# is tied to the VCC supply, device will not be ready until tVCCPH after VCC ≥ VCCMIN.
6.
When RST# is tied to the VCCQ supply, device will not be ready until tVCCPH after VCC ≥ VCCMIN..
7.
Reset completes within tPLPH if RST# is asserted while no erase or program operation is executing.
相關(guān)PDF資料
PDF描述
RC28F160C3TC90 1M X 16 FLASH 3V PROM, 90 ns, PBGA64
RC28F160C3BD70 1M X 16 FLASH 3V PROM, 70 ns, PBGA64
RC4194K DUAL OUTPUT, ADJUSTABLE MIXED REGULATOR, MBFM9
RM4194K DUAL OUTPUT, ADJUSTABLE MIXED REGULATOR, MBFM9
RC4194D DUAL OUTPUT, ADJUSTABLE MIXED REGULATOR, CDIP14
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RC28F256P33T85B 制造商:Micron Technology Inc 功能描述:256MB, KEARNY EBGA 3.0 - Tape and Reel
RC28F256P33TFA 功能描述:IC FLASH 256MBIT 95NS 64EZBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:Axcell™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步,DDR II 存儲容量:18M(1M x 18) 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應商設備封裝:165-CABGA(13x15) 包裝:托盤 其它名稱:71P71804S200BQ
RC28F256P33TFE 功能描述:IC FLASH 256MBIT 64EZBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:Axcell™ 標準包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:4.5M(256K x 18) 速度:133MHz 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應商設備封裝:100-TQFP(14x20) 包裝:托盤
RC28F320C3 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
RC28F320C3BA100 功能描述:IC FLASH 32MBIT 100NS 64BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:150 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤 供應商設備封裝:8-DFN(2x3) 包裝:管件 產(chǎn)品目錄頁面:1445 (CN2011-ZH PDF)