參數(shù)資料
型號(hào): R3612
廠商: Power Innovations International, Inc.
英文描述: PROGRAMMABLE OVERVOLTAGE PROTECTOR FOR ERICSSON COMPONENTS 3357/3 DCLIC
中文描述: 愛(ài)立信元件3357可編程過(guò)壓保護(hù)/ 3 DCLIC
文件頁(yè)數(shù): 9/16頁(yè)
文件大?。?/td> 222K
代理商: R3612
9
DECEMBER 1995 - REVISED SEPTEMBER 1997
R3612
PROGRAMMABLE OVERVOLTAGE PROTECTOR
FOR ERICSSON COMPONENTS 3357/3 DCLIC
P R O D U C T I N F O R M A T I O N
V
FD3/4
is the forward voltage of diode D3 or D4
V
FD5
is the forward voltage of diode D5
V
GG
is the gate reference voltage provided from the negative SLIC supply voltage V
BAT
.
V
GK
is the gate-cathode voltage of the thyristor.
The basic protection voltage is equal to the SLIC supply voltage plus a few volts. If the over voltage produced
sufficient cathode current, the thyristor would regenerate and crowbar into a low voltage on-state condition.
This action removes the voltage stress from the SLIC. The series gate diode, D5, is needed to prevent
shorting the SLIC supply rail when the thyristor crowbars. When the thyristor comes to delatch it will be
conducting the combined current of both SLIC outputs, via diodes D3 and D4, and so its holding current
needs to be above this current level.
This protection arrangement minimises the voltage stress on the SLIC, no matter what value of supply
voltage. In some SLIC designs, to minimise power consumption, the supply voltage is automatically adjusted
to a value that is just sufficient to drive the required line current. For short lines the supply voltage would be
low, but for long lines a higher supply voltage would be generated to drive sufficient line current. Thus a
protection scheme which tracks the battery voltage is ideal for this type of application. The normal protection
implementation used a small diode bridge (D1 to D4), an RCA SGT10S10 high holding current thyristor (TH)
and a fast diode (D5).
One or possibly two extra components are needed to ensure the correct functioning of the protection. Figure
5 shows how the finite thyristor regeneration time allows a small fraction of the fast impulse (12 A/μs) to
appear as gate current. The following negative gate current is the series gate diode recovery as the thyristor
switches. A gate decoupling capacitor, C1, is needed to maintain a reasonably constant gate supply voltage
during the clamping period.
In Figure 5, the positive gate charge (Q
GS
) is about 0.1 μC which, with the 1 μF gate decoupling capacitor
used, increased the gate supply by about 0.1 V (= Q
GS
/C5). This change is not visible on the -72 V gate
Figure 4. DISCRETE GATED THYRISTOR PROTECTION CIRCUIT
D1
D2
D3
D4
D5
C1
TH
D6
SLIC
NEGATIVE
SLIC
SUPPLY
~1
~2
-
+
WIRE A
WIRE B
R1
R2
V
GG
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