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參數(shù)資料
| 型號： | R3612 |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | PROGRAMMABLE OVERVOLTAGE PROTECTOR FOR ERICSSON COMPONENTS 3357/3 DCLIC |
| 中文描述： | 愛立信元件3357可編程過壓保護/ 3 DCLIC |
| 文件頁數(shù)： | 7/16頁 |
| 文件大?。?/td> | 222K |
| 代理商： | R3612 |
7
DECEMBER 1995 - REVISED SEPTEMBER 1997
R3612
PROGRAMMABLE OVERVOLTAGE PROTECTOR
FOR ERICSSON COMPONENTS 3357/3 DCLIC
P R O D U C T I N F O R M A T I O N
On-State Current, I
T
The current through the device in the on-state condition.
Forward Voltage, V
F
The voltage across the device in the forward conducting state at a specified current I
F
.
Forward Current, I
F
The current through the device in the forward conducting state.
thermal characteristics
Temperature Derating
Derating with temperature above a specified base temperature, expressed as a percentage, such as may be
applied to peak pulse current.
Thermal Resistance, R
θ
JL
, R
θ
JC
, R
θ
JA
The effective temperature rise per unit power dissipation of a designated junction, above the temperature of a
stated external reference point (lead, case, or ambient) under conditions of thermal equilibrium.
Transient thermal impedance, Z
θ
JL(t)
, Z
θ
JC(t)
, Z
θ
JA(t)
The change in the difference between the virtual junction temperature and the temperature of a specified
reference point or region (lead, case, or ambient) at the end of a time interval divided by the step function
change in power dissipation at the beginning of the same time interval which causes the change of
temperature-difference.
NOTE - It is the thermal impedance of the junction under conditions of change and is generally given in the
form of a curve as a function of the duration of an applied pulse.
(Virtual-)Junction Temperature, T
J
A theoretical temperature representing the temperature of the junction(s) calculated on the basis of a
simplified model of the thermal and electrical behaviour of the device.
Maximum Junction Temperature, T
JM
The maximum value of permissible junction temperature, due to self heating, which a TSS can withstand
without degradation.
gate terminal parameters
Gate Trigger Current, I
GT
The lowest gate current required to switch a device from the off state to the on state.
Gate Trigger Voltage, V
GT
The gate voltage required to produce the gate trigger current, I
GT
.
Gate-to-Adjacent Terminal Peak Off-State Voltage, V
GDM
The maximum gate to cathode voltage for a p-gate device or gate to anode voltage for an n-gate device that
may be applied such that a specified off-state current, I
D
, at a rated off-state voltage, V
D
, is not exceeded.
Peak Off-State Gate Current, I
GDM
The maximum gate current that results from the application of the peak off-state gate voltage, V
GDM
.
Gate Reverse Current, Adjacent Terminal Open, I
GAO ,
I
GKO
The current through the gate terminal when a specified gate bias voltage, V
G
, is applied and the cathode
terminal for a p-gate device or anode terminal for an n-gate device is open circuited.
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