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參數(shù)資料
| 型號(hào)： | R3612 |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | PROGRAMMABLE OVERVOLTAGE PROTECTOR FOR ERICSSON COMPONENTS 3357/3 DCLIC |
| 中文描述： | 愛立信元件3357可編程過壓保護(hù)/ 3 DCLIC |
| 文件頁數(shù)： | 2/16頁 |
| 文件大?。?/td> | 222K |
| 代理商： | R3612 |
R3612
PROGRAMMABLE OVERVOLTAGE PROTECTOR
FOR ERICSSON COMPONENTS 3357/3 DCLIC
DECEMBER 1995 - REVISED SEPTEMBER 1997
2
P R O D U C T I N F O R M A T I O N
absolute maximum ratings
NOTES: 1. Initially the protector must be in thermal equilibrium with 0°C
≤
T
J
≤
70°C. The surge may be repeated after the device returns to its
initial conditions.
2. Above 70°C, derate linearly to zero at 150°C lead temperature.
RATING
SYMBOL
V
DSM
V
DRM
V
GKRM
VALUE
-90
-80
-80
UNIT
V
V
V
Non-repetitive peak off-state voltage, I
G
= 0, 0°C
≤
T
J
≤
70°C
Repetitive peak off-state voltage, I
G
= 0, 0°C
≤
T
J
≤
70°C
Repetitive peak gate-cathode voltage, V
KA
= 0, 0°C
≤
T
J
≤
70°C
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
10/1000 μs (Bellcore TR-NWT-001089, Section 4 and Appendix A)
0.2/310 μs (RLM88, open-circuit voltage wave shape 1.5 kV 0.5/700 μs)
5/310 μs (CCITT K17, K20 & K21, open-circuit voltage wave shape 1.5 kV 10/700 μs))
2/10 μs (Bellcore TR-NWT-001089, Section 4 and Appendix A)
Non-repetitive peak on-state current, 50 Hz (see Notes 1 and 2)
200 ms
1 s
25 s
900 s
Non-repetitive peak gate current, 1/2 μs,(see Notes 1 and 2)
Junction temperature
Storage temperature range
I
TSP
A
30
38
38
80
I
TSM
A
5.6
3.5
0.7
0.42
25
I
GSM
T
J
T
stg
A
°C
°C
-55 to +150
-55 to +150
recommended operating conditions
MIN
TYP
220
MAX
UNIT
nF
C
G
Gate decoupling capacitor
electrical characteristics, T
amb
= 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
5
50
UNIT
μA
μA
I
D
Off-state current
V
D
= V
DRM
, V
GK
= 0
T
J
= 0°C
T
J
= 70°C
V
(BO)
Breakover voltage
I
T
= 20 A, I3124 generator, open-circuit voltage wave shape 1 5 kV
0.5/700 μs, board resistance R
S
= 35
, C
G
= 220 nF, V
GG
= -56 V
(See Note 3 and Figure 1.)
I
T
= 20 A, I3124 generator, open-circuit voltage
wave shape 1 5 kV 0.5/700 μs, board resist-
ance R
S
= 35
, C
G
= 220 nF, V
GG
= -56 V
(See Note 3 and Figure 1.)
I
F
= 5 A, t
w
= 500 μs
I
F
= 20 A,I3124 generator, open-circuit voltage wave shape 1 5 kV
0.5/700 μs, board resistance R
S
= 35
, C
G
= 220 nF, V
GG
= -56 V
(See Note 4 and Figure 1.)
I
T
= 20 A, I3124 generator, open-circuit voltage
wave shape 1 5 kV 0.5/700 μs, board resist-
ance R
S
= 35
, C
G
= 220 nF, V
GG
= -56 V
(See Note 4 and Figure 1.)
I
T
= 1 A, di/dt = -1A/ms, V
GG
= -70 V, 0°C
≤
T
J
≤
70°C
-80
V
t
(BR)
Breakdown time
V
(BR)
< -70 V
V
(BR)
< -58.5 V
1
10000
μs
V
F
Forward voltage
3
V
V
FRM
Peak forward recovery
voltage
15
V
t
FRM
Forward recovery time
V
F
> 10 V
V
F
> 5 V
V
F
> 1 V
0.25
1
10000
μs
I
H
Holding current
105
mA
I
GAS
Gate reverse current
V
GG
= -70 V, V
AK
= 0
T
J
= 0°C
T
J
= 70°C
-5
-50
μA
I
GAT
Gate reverse current,
on state
I
T
= 0.5 A, t
w
= 500 μs, V
GG
= -70 V
-1
mA
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