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參數(shù)資料
| 型號： | R3612 |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | PROGRAMMABLE OVERVOLTAGE PROTECTOR FOR ERICSSON COMPONENTS 3357/3 DCLIC |
| 中文描述： | 愛立信元件3357可編程過壓保護/ 3 DCLIC |
| 文件頁數(shù)： | 5/16頁 |
| 文件大小： | 222K |
| 代理商： | R3612 |
5
DECEMBER 1995 - REVISED SEPTEMBER 1997
R3612
PROGRAMMABLE OVERVOLTAGE PROTECTOR
FOR ERICSSON COMPONENTS 3357/3 DCLIC
P R O D U C T I N F O R M A T I O N
DEVICE PARAMETERS
general
Thyristor based over voltage protectors, for telecommunications equipment, became popular in the late
1970s. These were fixed voltage breakover triggered devices, likened to solid state gas discharge tubes. As
these were new forms of thyristor, the existing thyristor terminology did not cover their special characteristics.
This resulted in the invention of new terms based on the application usage and device characteristic. Initially,
there was a wide diversity of terms to describe the same thing, but today the number of terms have reduced
and stabilised. Information on fixed voltage over voltage protector terms, symbols and their definitions is given
in the publication SLPDE05, “Over-voltage Protection For Telecommunication Systems - Data Manual and
Application Information”, pp 1-4 to 1-6, Texas Instruments Limited, Bedford, 1994.
Programmable, (gated), over voltage protectors are relatively new and require additional parameters to
specify their operation. Similarly to the fixed voltage protectors, the introduction of these devices has resulted
in a wide diversity of terms to describe the same thing. This section has a list of alternative terms and the
parameter definitions used for this data sheet. In general, the Texas Instruments approach is to use terms
related to the device internal structure, rather than its application usage as a single device may have many
applications each using a different terminology for circuit connection.
terms, definitions and symbols
Thyristor over voltage protectors have substantially different characteristics and usage to the type of thyristor
covered by IEC 747-6. These differences necessitate the modification of some characteristic descriptions and
the introduction of new terms. Where possible terms are used from the following standards.
IEC 747-1:1983,
Semiconductor devices - Discrete devices and integrated circuits - Part 1: General
IEC 747-2:1983,
Semiconductor devices - Discrete devices and integrated circuits - Part 2: Rectifier Diodes
IEC 747-6:1983,
Semiconductor devices - Discrete devices and integrated circuits - Part 6: Thyristors
main terminal ratings
Repetitive Peak Off-State Voltage, V
DRM
Rated maximum (peak) instantaneous voltage that may be applied in the off-state conditions including all d.c.
and repetitive voltage components.
Repetitive Peak On-State Current, I
TRM
Rated maximum (peak) value of a.c. power frequency on-state current of specified waveshape and frequency
which may be applied continuously.
Non-Repetitive Peak On-State Current, I
TSM
Rated maximum (peak) value of a.c. power frequency on-state surge current of specified waveshape and
frequency which may be applied for a specified time or number of a.c. cycles.
Non-Repetitive Peak Pulse Current, I
TSP
Rated maximum value of peak impulse pulse current of specified amplitude and waveshape that may be
applied.
Non-Repetitive Peak Forward Current, I
FSM
Rated maximum (peak) value of a.c. power frequency forward surge current of specified waveshape and
frequency which may be applied for a specified time or number of a.c. cycles.
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