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| 型號： | R3612 |
| 廠商： | Power Innovations International, Inc. |
| 英文描述： | PROGRAMMABLE OVERVOLTAGE PROTECTOR FOR ERICSSON COMPONENTS 3357/3 DCLIC |
| 中文描述： | 愛立信元件3357可編程過壓保護(hù)/ 3 DCLIC |
| 文件頁數(shù)： | 8/16頁 |
| 文件大小： | 222K |
| 代理商： | R3612 |
R3612
PROGRAMMABLE OVERVOLTAGE PROTECTOR
FOR ERICSSON COMPONENTS 3357/3 DCLIC
DECEMBER 1995 - REVISED SEPTEMBER 1997
8
P R O D U C T I N F O R M A T I O N
Gate Reverse Current, Main Terminals Short Circuited, I
GAS
, I
GKS
The current through the gate terminal when a specified gate bias voltage, V
G
, is applied and the cathode
terminal for a p-gate device or anode terminal for an n-gate device is short-circuited to the third terminal.
NOTE-This definition only applies to devices with integrated series gate blocking diodes.
Gate Reverse Current, On-State, I
GAT
, I
GKT
The current through the gate terminal when a specified gate bias voltage, V
G
, is applied and a specified on-
state current, I
T
, is flowing.
NOTE-This definition only applies to devices with integrated series gate blocking diodes.
Gate Reverse Current, Forward Conducting State, I
GAF
, I
GKF
The current through the gate terminal when a specified gate bias voltage, V
G
, is applied and a specified
forward conduction current, I
F
, is flowing.
NOTE-This definition only applies to devices with integrated series gate blocking diodes.
Gate Switching Charge, Q
GS
The charge through the gate terminal, under impulse conditions, during the transition from the off-state to the
switching point, when a specified gate bias voltage, V
G
, is applied.
Peak Gate Switching Current, I
GSM
The maximum value of current through the gate terminal during the transition from the off-state to the
switching point, when a specified gate bias voltage, V
G
, is applied.
Gate-to-Adjacent Terminal Breakover Voltage, V
GK(BO) ,
V
GA(BO)
The gate to cathode voltage for a p-type device or gate to anode voltage for an n-gate device at the breakover
point. This is equivalent to the voltage difference between the breakover voltage, V
(BO)
, and the specified gate
voltage, V
G
.
APPLICATIONS INFORMATION
electrical characteristics
The electrical characteristics of a thyristor over voltage protector are strongly dependent on junction
temperature, T
J
. Hence a characteristic value will depend on the junction temperature at the instant of
measurement. The values given in this data sheet were measured on commercial testers, which generally
minimise the temperature rise caused by testing.
gated protector evolution and characteristics
discrete gated protection
The first gated thyristor protection arrangement used discrete components, Figure 4. Positive line over
voltages were clipped to ground by diodes D1 and D2. Negative line over voltages, via diodes D3 and D4,
pulled the cathode of thyristor TH negative. Voltage limiting occurred when the negative over voltage caused
the series gate diode, D5, and the thyristor gate-cathode to conduct. As the series gate diode was connected
to the SLIC negative supply, the limiting voltage approximated to:
V
FD3/4
+ V
GK
+ V
FD5
+ V
GG
where
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