- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382396 > PSMN003-30B (NXP SEMICONDUCTORS) N-channel enhancement mode field-effect transistor PDF資料下載
參數(shù)資料
| 型號(hào)： | PSMN003-30B |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 75 A, 30 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁(yè)數(shù)： | 8/13頁(yè) |
| 文件大?。?/td> | 291K |
| 代理商： | PSMN003-30B |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)當(dāng)前第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)
Philips Semiconductors
PSMN003-30 series
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 — 23 October 2001
8 of 13
9397 750 08316
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
T
j
= 25
°
C and 175
°
C; V
GS
= 0 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
I
D
= 75 A; V
DD
= 15 V
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
03af54
0
20
40
60
80
100
I
S
(A)
0.0
0.5
1.0
1.5
V
SD
(V)
T
j
= 25 oC
175 oC
V
GS
= 0 V
03af56
0
2
4
6
8
10
12
0
50
100
150
200
Q
G
(nC)
V
GS
(V)
V
DD
= 15 V
I
D
= 75 A
T
j
= 25 oC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PSMN003-30P | N-channel enhancement mode field-effect transistor |
| PSMN004-25B | N-channel logic level TrenchMOS transistor |
| PSMN004-25P | N-channel logic level TrenchMOS transistor |
| PSMN004-36B | N-channel enhancement mode field-effect transistor |
| PSMN004-36P | N-channel enhancement mode field-effect transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PSMN003-30B /T3 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PSMN003-30B,118 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PSMN003-30B | 制造商:NXP Semiconductors 功能描述:MOSFET N D2-PAK |
| PSMN003-30P | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PSMN003-30P,127 | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。