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參數(shù)資料
| 型號： | PSMN003-30B |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 75 A, 30 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數(shù)： | 6/13頁 |
| 文件大?。?/td> | 291K |
| 代理商： | PSMN003-30B |
Philips Semiconductors
PSMN003-30 series
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 — 23 October 2001
6 of 13
9397 750 08316
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
T
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C and 175
°
C; V
DS
> I
D
x R
DSon
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 5.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03af50
0
50
100
150
200
250
300
350
400
0
0.5
1
1.5
2
2.5
V
DS
(V)
I
D
(A)
3.8 V
4 V
T
j
= 25 oC
20 V
3.6 V
4.2 V
4.6 V
15 V
4.4 V
5 V
4.8 V
3.4 V
V
GS
= 10 V 7 V 5.2 V
03af52
0
20
40
60
80
100
I
D
(A)
0
1
2
3
4
5
6
V
GS
(V)
V
DS
> I
D
x R
DSon
T
j
= 25 oC
175 oC
03af51
0
0.001
0.002
0.003
0.004
0.005
0.006
R
DSon
(
)
0
100
200
300
400
500
I
D
(A)
V
GS
= 20 V
T
j
= 25 oC
5 V
10 V
5.2 V
6 V
15 V
3.8 V 4 V 4.2 V 4.4 V 4.6 V 4.8 V
03af18
0
0.4
0.8
1.2
1.6
2
-60
0
60
120
180
T
j
(oC)
a
a
R
DSon 25 C
)
----------------------------
=
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PSMN003-30B /T3 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PSMN003-30B,118 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PSMN003-30B | 制造商:NXP Semiconductors 功能描述:MOSFET N D2-PAK |
| PSMN003-30P | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PSMN003-30P,127 | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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