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參數(shù)資料
| 型號： | PMWD26UN |
| 英文描述： | 100mA CMOS Voltage Converter; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to +70°C |
| 中文描述： | 雙uTrenchMOS（TM）超低水平場效應管 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大小： | 240K |
| 代理商： | PMWD26UN |
Philips Semiconductors
PMWD26UN
Dual
μ
TrenchMOS ultra low level FET
Product data
Rev. 01 — 22 January 2003
9 of 12
9397 750 10834
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
6.
Package outline
Fig 14. SOT530-1 (TSSOP8).
UNIT
A1
A
max.
A2
A3
bp
L
HE
Lp
w
y
v
c
e
D
(1)
E
(2)
Z
(1)
θ
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
0.15
0.05
0.95
0.85
0.30
0.19
0.20
0.13
3.10
2.90
4.50
4.30
0.65
6.50
6.30
0.70
0.35
8
°
0
°
0.10
0.10
0.10
0.94
DIMENSIONS (mm are the original dimensions)
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
0.70
0.50
SOT530-1
MO-153
99-12-27
00-02-24
w
M
bp
D
Z
e
0.25
1
4
8
5
θ
A
A2
A1
Lp
(A3)
detail X
L
HE
E
c
v
M
A
X
A
y
2.5
5 mm
0
scale
TSSOP8: plastic thin shrink small outline package; 8 leads; body width 4.4 mm
SOT530-1
1.10
pin 1 index
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PMWD26UN,518 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PMWD26UN | 制造商:NXP Semiconductors 功能描述:MOSFET N TSSOP-8 |
| PMWD30UN | 制造商:NXP Semiconductors 功能描述:MOSFET N TSSOP-8 |
| PMWD30UN,518 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PMWD30UN | 制造商:NXP Semiconductors 功能描述:MOSFET N TSSOP-8 |
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