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參數資料
| 型號： | PMWD26UN |
| 英文描述： | 100mA CMOS Voltage Converter; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to +70°C |
| 中文描述： | 雙uTrenchMOS（TM）超低水平場效應管 |
| 文件頁數： | 7/12頁 |
| 文件大?。?/td> | 240K |
| 代理商： | PMWD26UN |
Philips Semiconductors
PMWD26UN
Dual
μ
TrenchMOS ultra low level FET
Product data
Rev. 01 — 22 January 2003
7 of 12
9397 750 10834
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
I
D
= 1 mA; V
DS
= V
GS
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
T
j
= 25
°
C; V
DS
= 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
V
GS
= 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
T
j
= 25
°
C and 150
°
C; V
GS
= 0 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
03aj65
0
0.2
0.4
0.6
0.8
1
-60
0
60
120
180
Tj (
°
C)
VGS(th)
(V)
min
typ
03aj64
10-6
10-5
10-4
10-3
0
0.2
0.4
0.6
0.8
1
VGS (V)
ID
(A)
min
typ
003aaa271
103
10-1
1
10
102
VDS (V)
C
(pF)
102
104
C
oss
C
rss
C
iss
003aaa272
0
1
2
3
4
0
0.2
0.4
0.6
0.8
1
VSD (V)
IS
(A)
T
j
= 25
°
C
150
°
C
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相關代理商/技術參數 |
參數描述 |
|---|---|
| PMWD26UN,518 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PMWD26UN | 制造商:NXP Semiconductors 功能描述:MOSFET N TSSOP-8 |
| PMWD30UN | 制造商:NXP Semiconductors 功能描述:MOSFET N TSSOP-8 |
| PMWD30UN,518 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PMWD30UN | 制造商:NXP Semiconductors 功能描述:MOSFET N TSSOP-8 |
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