- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄368077 > PMWD26UN 100mA CMOS Voltage Converter; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to +70°C PDF資料下載
參數(shù)資料
| 型號： | PMWD26UN |
| 英文描述： | 100mA CMOS Voltage Converter; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to +70°C |
| 中文描述： | 雙uTrenchMOS（TM）超低水平場效應(yīng)管 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 240K |
| 代理商： | PMWD26UN |
Philips Semiconductors
PMWD26UN
Dual
μ
TrenchMOS ultra low level FET
Product data
Rev. 01 — 22 January 2003
5 of 12
9397 750 10834
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
5.
Characteristics
Table 4:
T
j
= 25
°
C unless otherwise specified
Symbol Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown voltage
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 250
μ
A; V
GS
= 0 V
T
j
= 25
°
C
T
j
=
55
°
C
I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
V
DS
= 20 V; V
GS
= 0 V
T
j
= 25
°
C
T
j
= 150
°
C
V
GS
=
±
10 V; V
DS
= 0 V
V
GS
= 4.5 V; I
D
= 3.5 A;
Figure 7
and
8
T
j
= 25
°
C
T
j
= 150
°
C
V
GS
= 1.8 V; I
D
= 3.5 A;
Figure 7
V
GS
= 2.5 V; I
D
= 3.5 A;
Figure 7
20
18
0.45
-
-
0.7
-
-
-
V
V
V
V
GS(th)
I
DSS
gate-source threshold voltage
drain-source leakage current
-
-
-
-
-
-
1
100
100
μ
A
μ
A
nA
I
GSS
R
DSon
gate-source leakage current
drain-source on-state resistance
-
-
-
-
26
44
34
29
30
51
40
35
m
m
m
m
Dynamic characteristics
Q
g(tot)
total gate charge
Q
gs
gate-source charge
Q
gd
gate-drain (Miller) charge
C
iss
input capacitance
C
oss
output capacitance
C
rss
reverse transfer capacitance
t
d(on)
turn-on delay time
t
r
rise time
t
d(off)
turn-off delay time
t
f
fall time
Source-drain diode
V
SD
source-drain (diode forward) voltage I
S
= 4 A; V
GS
= 0 V;
Figure 12
t
rr
reverse recovery time
Q
r
recovered charge
I
D
= 4 A; V
DD
= 16 V; V
GS
= 4.5 V;
Figure 13
-
-
-
-
-
-
-
-
-
-
23.6
2.1
6.7
1366 -
239
14
22
56
33
-
-
-
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0 V; V
DS
= 16 V; f = 1 MHz;
Figure 11
-
-
-
-
-
-
V
DD
= 10 V; I
D
= A; V
GS
= 4.5 V; R
G
= 6
-
-
-
0.67
45
13
1.2
-
-
V
ns
nC
I
S
= 4 A; dI
S
/dt =
100 A/
μ
s; V
R
= 20 V;
V
GS
= 0 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PMZ760SN | uTrenchMOS (tm) standard level FET |
| PN101F | PHOTOTRANSISTOR | NPN | 800NM PEAK WAVELENGTH | 50M | CAN-4.7 |
| PN102F | PHOTOTRANSISTOR | NPN | 800NM PEAK WAVELENGTH | 50M | CAN-4.7 |
| PN102 | Silicon planar type |
| PN101 | 17MHz to 170MHz Resistor Set SOT-23 Oscillator; Package: SOT; No of Pins: 5; Temperature Range: -40° to +125°C |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PMWD26UN,518 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PMWD26UN | 制造商:NXP Semiconductors 功能描述:MOSFET N TSSOP-8 |
| PMWD30UN | 制造商:NXP Semiconductors 功能描述:MOSFET N TSSOP-8 |
| PMWD30UN,518 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PMWD30UN | 制造商:NXP Semiconductors 功能描述:MOSFET N TSSOP-8 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。