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| 型號： | PMWD26UN |
| 英文描述： | 100mA CMOS Voltage Converter; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to +70°C |
| 中文描述： | 雙uTrenchMOS（TM）超低水平場效應(yīng)管 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 240K |
| 代理商： | PMWD26UN |
Philips Semiconductors
PMWD26UN
Dual
μ
TrenchMOS ultra low level FET
Product data
Rev. 01 — 22 January 2003
6 of 12
9397 750 10834
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
T
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C and 150
°
C; V
DS
>
I
D
×
R
DSon
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 5.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain source on-state resistance
factor as a function of junction temperature.
003aaa268
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
VDS (V)
ID
(A)
1.0 V
1.1 V
1.2 V
1.8 V
4.5 V
VGS = 1.3 V
003aaa269
0
2
4
6
8
10
0
0.5
1
1.5
2
VGS (V)
ID
(A)
T
j
= 150
°
C
25
°
C
003aaa270
0
20
40
60
80
0
1
2
3
4
ID (A)
1.3 V
1.1 V
1.2 V
1.8 V
VGS = 2.5 V
4.5 V
(m
)
RDSon
03aa27
0
0.5
1
1.5
2
-60
0
60
120
180
Tj (
°
C)
a
a
R
R
DSon 25
°
C
)
-----------------------------
=
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| PMWD26UN,518 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PMWD26UN | 制造商:NXP Semiconductors 功能描述:MOSFET N TSSOP-8 |
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| PMWD30UN | 制造商:NXP Semiconductors 功能描述:MOSFET N TSSOP-8 |
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