參數(shù)資料
型號(hào): PMV56XN
英文描述: uTrenchMOS (tm) extremely low level FET
中文描述: uTrenchMOS(TM)極低電平場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù): 9/12頁(yè)
文件大?。?/td> 234K
代理商: PMV56XN
Philips Semiconductors
PMV56XN
μ
TrenchMOS extremely low level FET
Product data
Rev. 01 — 26 February 2003
9 of 12
9397 750 11096
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
9.
Package outline
Fig 14. SOT23.
UNIT
A
1
max.
b
p
c
D
E
e
1
H
E
L
p
Q
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
IEC
JEDEC
EIAJ
mm
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
0.95
e
1.9
2.5
2.1
0.55
0.45
0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23
TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
A
B
0
1
2 mm
scale
A
1.1
0.9
c
X
1
2
3
Plastic surface mounted package; 3 leads
SOT23
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