參數(shù)資料
型號(hào)： PMV56XN
英文描述： uTrenchMOS (tm) extremely low level FET
中文描述： uTrenchMOS（TM）極低電平場(chǎng)效應(yīng)晶體管
文件頁數(shù)： 5/12頁
文件大小： 234K
代理商： PMV56XN
Philips Semiconductors
PMV56XN
μ
TrenchMOS extremely low level FET
Product data
Rev. 01 — 26 February 2003
5 of 12
9397 750 11096
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
8.
Characteristics
Table 5:
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
gate-source threshold voltage
I
DSS
drain-source leakage current
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 10
μ
A; V
GS
= 0 V
I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
V
DS
= 20 V; V
GS
= 0 V
T
j
= 25
°
C
T
j
= 55
°
C
V
GS
=
±
8 V; V
DS
= 0 V
V
GS
= 4.5 V; I
D
= 3.6 A;
Figure 7
and
8
V
GS
= 2.5 V; I
D
= 3.1 A;
Figure 7
and
8
20
0.65
-
-
-
-
V
V
-
-
-
-
-
0.01
-
10
56
77
1.0
10
100
85
115
μ
A
μ
A
nA
m
m
I
GSS
R
DSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
Q
g(tot)
total gate charge
Q
gs
gate-source charge
Q
gd
gate-drain (Miller) charge
C
iss
input capacitance
C
oss
output capacitance
C
rss
reverse transfer capacitance
t
d(on)
turn-on delay time
t
r
rise time
t
d(off)
turn-off delay time
t
f
fall time
Source-drain diode
V
SD
source-drain (diode forward) voltage I
S
= 1.6 A; V
GS
= 0 V;
Figure 12
V
DD
= 10 V; V
GS
= 4.5 V; I
D
= 3.6 A;
Figure 13
-
-
-
-
-
-
-
-
-
-
5.4
0.65
1.6
230
125
80
12
23
50
34
-
-
-
-
-
-
-
-
-
-
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0 V; V
DS
= 10 V; f = 1 MHz;
Figure 11
V
DD
= 10 V; R
L
= 5.5
; V
GS
= 4.5 V; R
G
= 6
-
0.8
1.2
V
相關(guān)PDF資料
PDF描述
PMWD19UN Dual uTrenchMOS (tm) ultra low level FET
PMWD22XN Dual N-channel uTrenchMOS extremely low level FET
PMWD26UN 100mA CMOS Voltage Converter; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to +70°C
PMZ760SN uTrenchMOS (tm) standard level FET
PN101F PHOTOTRANSISTOR | NPN | 800NM PEAK WAVELENGTH | 50M | CAN-4.7
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PMV56XN T/R 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PMV56XN,215 功能描述:MOSFET LOW LEVEL FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PMV56XN@215 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 20V 3.76A 3-Pin TO-236AB T/R
PMV56XN215 制造商:NXP Semiconductors 功能描述:MOSFET N CH 20V 3.76A SOT23
PMV60EN 制造商:NXP Semiconductors 功能描述:MOSFET N SOT-23 制造商:NXP Semiconductors 功能描述:MOSFET, N, SOT-23
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*