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參數(shù)資料
| 型號(hào)： | PMV56XN |
| 英文描述： | uTrenchMOS (tm) extremely low level FET |
| 中文描述： | uTrenchMOS（TM）極低電平場(chǎng)效應(yīng)晶體管 |
| 文件頁數(shù)： | 12/12頁 |
| 文件大?。?/td> | 234K |
| 代理商： | PMV56XN |
Koninklijke Philips Electronics N.V. 2003.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 26 February 2003
Document order number: 9397 750 11096
Contents
Philips Semiconductors
PMV56XN
μ
TrenchMOS extremely low level FET
1
2
3
4
5
6
7
7.1
8
9
10
11
12
13
14
Description
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information
. . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data
. . . . . . . . . . . . . . . . . . . . . 2
Limiting values
. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics
. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance. . . . . . . . . . . . . . 4
Characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline
. . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status
. . . . . . . . . . . . . . . . . . . . . . . 11
Definitions
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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|---|---|
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| PMWD22XN | Dual N-channel uTrenchMOS extremely low level FET |
| PMWD26UN | 100mA CMOS Voltage Converter; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to +70°C |
| PMZ760SN | uTrenchMOS (tm) standard level FET |
| PN101F | PHOTOTRANSISTOR | NPN | 800NM PEAK WAVELENGTH | 50M | CAN-4.7 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PMV56XN T/R | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PMV56XN,215 | 功能描述:MOSFET LOW LEVEL FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PMV56XN@215 | 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 20V 3.76A 3-Pin TO-236AB T/R |
| PMV56XN215 | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 20V 3.76A SOT23 |
| PMV60EN | 制造商:NXP Semiconductors 功能描述:MOSFET N SOT-23 制造商:NXP Semiconductors 功能描述:MOSFET, N, SOT-23 |
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