參數(shù)資料
型號(hào)： PIC12F510
廠商： Microchip Technology Inc.
英文描述： 8/14-Pin, 8-Bit Flash Microcontroller
中文描述： 8/14-Pin，8位閃存微控制器
文件頁(yè)數(shù)： 89/114頁(yè)
文件大?。?/td> 908K
代理商： PIC12F510
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2006 Microchip Technology Inc.
Preliminary
DS41268B-page 87
PIC12F510/16F506
13.2
DC Characteristics: PIC12F510/16F506 (Extended)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise specified)
Operating Temperature -40
°
C
≤
T
A
≤
+125
°
C (Extended)
Parm
No.
Sym
Characteristic
Min
Typ
(1)
Max
Units
Conditions
D001
D002
V
DD
V
DR
Supply Voltage
RAM Data Retention
Voltage
(2)
V
DD
Start Voltage
to
ensure Power-on Reset
V
DD
Rise Rate
to ensure
Power-on Reset
Supply Current
(3)
2.0
—
—
1.5*
5.5
—
V
V
See Figure 13-1
Device in Sleep mode
D003
V
POR
—
Vss
—
V
See
Section 10.4 “Power-on Reset
(POR)”
V/ms See
Section 10.4 “Power-on Reset
(POR)”
for details
D004
S
VDD
0.05*
—
—
D010
I
DD
—
—
—
—
—
385
170
0.4
1.7
15
TBD
TBD
TBD
TBD
TBD
μ
A
μ
A
mA
mA
μ
A
F
OSC
= 4 MHz, V
DD
= 5.0V
F
OSC
= 4 MHz, V
DD
= 2.0V
(4)
F
OSC
= 8 MHz, V
DD
= 3.0V
F
OSC
= 20 MHz, V
DD
= 5.0V
F
OSC
= 32 kHz, V
DD
= 2.0V, WDT
disabled
V
DD
= 2.0V
V
DD
= 2.0V
V
DD
= 2.0V
V
DD
= 2.0V
V
DD
= 2.0V
D020
D022
D023
D024
D025
I
PD
Δ
I
WDT
Δ
I
CMP
Δ
I
ADC
Δ
IV
REF
Power-Down Current
(5)
WDT Current
(5)
Comparator Current
ADC Current
Internal Reference
Current
Δ
CV
REF
Comparator Voltage
Reference Current
Legend:
TBD = To be determined.
*
These parameters are characterized but not tested.
Note 1:
Data in the Typical (“Typ”) column is based on characterization results at 25
°
C. This data is for design
guidance only and is not tested.
2:
This is the limit to which V
DD
can be lowered in Sleep mode without losing RAM data.
3:
The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus
loading, oscillator type, bus rate, internal code execution pattern and temperature also have an impact on
the current consumption.
a) The test conditions for all I
DD
measurements in active operation mode are:
OSC1 = external square wave, from rail-to-rail; all I/O pins tri-stated, pulled to V
SS
, T0CKI = V
DD
,
MCLR = V
DD
;
WDT enabled/disabled as specified.
b) For standby current measurements, the conditions are the same, except that the device is in Sleep
mode.
4:
Does not include current through R
EXT
(in EXTRC mode only). The current through the resistor can be
estimated by the formula:
I = V
DD
/2R
EXT
(mA) with R
EXT
in k
Ω
.
5:
The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is
measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to V
DD
or V
SS
.
—
—
—
—
—
0.1
1.0
15
100
80
TBD
TBD
TBD
TBD
TBD
μ
A
μ
A
μ
A
μ
A
μ
A
D026
—
58
TBD
μ
A
V
DD
= 2.0V
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