- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382393 > PHW7N60 (NXP SEMICONDUCTORS) PowerMOS transistor PDF資料下載
參數(shù)資料
| 型號： | PHW7N60 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor |
| 中文描述： | 7 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 56K |
| 代理商： | PHW7N60 |
Philips Semiconductors
Product specification
PowerMOS transistor
PHW7N60
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); parameter V
DS
Fig.14. Typical switching times
t
d(on)
, t
r
, t
d(off)
, t
f
= f(R
G
)
Fig.15. Normalised drain-source breakdown voltage
V
(BR)DSS
/V
(BR)DSS 25 C
= f(T
j
)
Fig.16. Source-Drain diode characteristic.
I
F
= f(V
SDS
); parameter T
j
Fig.17. Normalised unclamped inductive energy.
E
AS
% = f(T
j
)
Fig.18. Unclamped inductive test circuit.
E
AS
=
0.5
LI
D
0
50
Qg, Gate charge (nC)
100
150
0
5
10
15
PHP6N60
VGS, Gate-Source voltage (Volts)
ID = 6.2 A
Tj = 25 C
VDD = 360 V
240 V
120 V
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
5
10
15
20
PHP6N60
VSDS, Source-Drain voltage (Volts)
IF, Source-Drain diode current (Amps)
VGS = 0 V
Tj = 25 C
150 C
0
10
20
30
40
50
60
10
100
1000
td(on)
td(off)
PHP6N60
RG, Gate resistance (Ohms)
Switching times (ns)
VDD = 300 V
VGS = 10 V
Tj = 25 C
RD = 47 Ohms
ID = 6.2 A
tr
tf
20
40
60
80
100
120
140
Starting Tj ( C)
120
110
100
90
80
70
60
50
40
30
20
10
0
EAS, Normalised unclamped inductive energy (%)
-100
-50
0
50
100
150
0.85
0.9
0.95
1
1.05
1.1
1.15
Tj, Junction temperature (C)
Normalised Drain-source breakdown voltage
V(BR)DSS @ Tj
V(BR)DSS @ 25 C
L
T.U.T.
VDD
RGS
R 01
shunt
VDS
-ID/100
+
-
VGS
0
2
V
(
BR
)
DSS
/(
V
(
BR
)
DSS
V
DD
)
June 1997
5
Rev 1.000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PHX10N40E | Circular Connector; Body Material:Aluminum Alloy; Series:KPT00; No. of Contacts:16; Connector Shell Size:20; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Pin RoHS Compliant: No |
| PHX15N06E | Circular Connector; Body Material:Aluminum Alloy; Series:KPT00; No. of Contacts:16; Connector Shell Size:20; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket RoHS Compliant: No |
| PHX18NQ11 | N-channel TrenchMOS standard level FET |
| PHX18NQ11T | N-channel TrenchMOS standard level FET |
| PHX18NQ20T | N-channel enhancement mode field-effect transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHW7N60E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
| PHW80NQ10T | 功能描述:MOSFET N-CH TRENCH 100V 80A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHW80NQ10T,127 | 功能描述:MOSFET N-CH TRENCH 100V 80A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHW8N50E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
| PHW8ND50E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors FREDFET, Avalanche energy rated |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。