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參數(shù)資料
| 型號： | PHX15N06E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | Circular Connector; Body Material:Aluminum Alloy; Series:KPT00; No. of Contacts:16; Connector Shell Size:20; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket RoHS Compliant: No |
| 中文描述： | 13 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 57K |
| 代理商： | PHX15N06E |
Philips Semiconductors
Product specification
PowerMOS transistor
Isolated version of PHP20N06E
PHX15N06E
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode
field-effect power transistor in a
plastic full-pack envelope. The
device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and
in automotive and general purpose
switching applications.
SYMBOL
PARAMETER
MAX.
UNIT
V
DS
I
D
P
tot
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state
resistance
60
13
25
0.08
V
A
W
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
V
DS
Drain-source voltage
V
DGR
Drain-gate voltage
±
V
GS
Gate-source voltage
I
D
Drain current (DC)
I
D
Drain current (DC)
I
DM
Drain current (pulse peak value)
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
-
R
GS
= 20 k
-
T
hs
= 25 C
T
hs
= 100 C
T
hs
= 25 C
T
hs
= 25 C
-
-
MIN.
-
-
-
-
-
-
-
- 55
-
MAX.
60
60
30
13
8.2
52
25
150
150
UNIT
V
V
V
A
A
A
W
C
C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
MIN.
-
TYP.
-
MAX.
5
UNIT
K/W
R
th j-a
-
55
-
K/W
1 2 3
case
d
g
s
November 1996
1
Rev 1.000
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