參數(shù)資料
型號: PHU2N50E
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistors Avalanche energy rated
中文描述: 2 A, 500 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
封裝: PLASTIC, IPAK-3
文件頁數(shù): 8/9頁
文件大?。?/td> 64K
代理商: PHU2N50E
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHU2N50E
MECHANICAL DATA
Fig.20. SOT533 surface mounting package. Pin 2 connected to mounting base.
REFERENCES
OUTLINE
EUROPEAN
ISSUE DATE
IEC
JEDEC
EIAJ
SOT533
99-02-18
TO-251
0
2.5
5 mm
scale
Plastic single-ended package (Philips version of I-PAK); 3 leads (in-line)
SOT533
UNIT
D
e
Q
L
c
e1
A
2.285
mm
2.38
7.28
A1
0.89
b
0.89
0.56
0.46
E
1
D1
1.06
0.96
E
6.73
6.47
5.36
5.26
4.57
9.8
9.4
1.00
1.10
DIMENSIONS (mm are the original dimensions)
D
D1
L
1
2
3
mounting
base
e1
e
Q
b
A
E
E1
A1
c
w
M
May 1999
8
Rev 1.000
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