參數(shù)資料
型號： PHW20N50E
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： PowerMOS transistors Avalanche energy rated
中文描述： 20 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
封裝： TO-247, 3 PIN
文件頁數(shù)： 1/7頁
文件大?。?/td> 93K
代理商： PHW20N50E
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHW20N50E
FEATURES
SYMBOL
QUICK REFERENCE DATA
Repetitive Avalanche Rated
Fast switching
Stable off-state characteristics
High thermal cycling performance
Low thermal resistance
V
DSS
= 500 V
I
D
= 20 A
R
DS(ON)
≤
0.27
GENERAL DESCRIPTION
PINNING
SOT429 (TO247)
N-channel,
field-effect
intendedfor use in off-lineswitched
mode power supplies, T.V. and
computer monitor power supplies,
d.c.tod.c.converters,motorcontrol
circuits
and
general
switching applications.
enhancement
power
mode
PIN
DESCRIPTION
transistor,
1
gate
2
drain
purpose
3
source
tab
drain
ThePHW20N50E issupplied in the
SOT429
(TO247)
leaded package.
conventional
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
Drain-source voltage
V
DGR
Drain-gate voltage
V
GS
Gate-source voltage
I
D
Continuous drain current
CONDITIONS
T
j
= 25 C to 150C
T
j
= 25 C to 150C; R
GS
= 20 k
MIN.
-
-
-
-
-
-
-
- 55
MAX.
500
500
±
30
20
12.4
80
250
150
UNIT
V
V
V
A
A
A
W
C
T
mb
= 25 C; V
GS
= 10 V
T
mb
= 100 C; V
GS
= 10 V
T
mb
= 25 C
T
mb
= 25 C
I
DM
P
D
T
j
, T
stg
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
E
AS
Non-repetitive avalanche
energy
CONDITIONS
Unclamped inductive load, I
= 20 A;
t
p
= 0.2 ms; T
j
prior to avalanche = 25C;
V
DD
≤
50 V; R
= 50
; V
= 10 V
MIN.
-
MAX.
1300
UNIT
mJ
E
AR
Repetitive avalanche energy
1
I
= 20 A; t
= 2.5
μ
s; T
prior to
avalanche = 25C; R
GS
= 50
; V
GS
= 10 V
Repetitive and non-repetitive
avalanche current
-
32
mJ
I
AS
, I
AR
-
20
A
d
g
s
2
3
1
1
pulse width and repetition rate limited by T
j
max.
December 1998
1
Rev 1.000
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