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參數(shù)資料
| 型號(hào)： | PHT6N06 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | TrenchMOS transistor Standard level FET |
| 中文描述： | TrenchMOS晶體管標(biāo)準(zhǔn)電平場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 5/10頁(yè) |
| 文件大?。?/td> | 71K |
| 代理商： | PHT6N06 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
Standard level FET
PHT6N06T
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
); conditions: V
DS
= 25 V; parameter T
j
Fig.8. Typical transconductance, T
= 25 C
g
fs
= f(I
D
); conditions: V
DS
= 25 V
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
); I
D
= 5 A; V
GS
= 10 V
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 C; V
DS
= V
GS
Fig.12. Typical capacitances, C
, C
, C
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
0
1
2
3
4
5
6
7
8
0
2
4
6
8
10
ID/A
VGS/V
Tj/C =
150
25
BUK78xx-55
0
-50
0
50
100
150
200
1
2
3
4
5
Tj / C
VGS(TO) / V
max.
typ.
min.
1
1.5
2
2.5
3
3.5
4
1
2
3
4
5
6
7
8
9
10
gfs/S
ID/A
0
1
2
3
4
5
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
Sub-Threshold Conduction
typ
2%
98%
BUK98XX-55
-100
-50
0
50
100
150
200
0.5
1
1.5
2
2.5
Tmb / degC
Rds(on) normalised to 25degC
a
0.01
0.1
1
10
100
0
50
100
150
200
250
300
350
Ciss
Coss
Crss
VDS/V
p
September 1997
5
Rev 1.000
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|---|---|
| PHT6N06LT | 制造商:NXP Semiconductors 功能描述:MOSFET N SOT-223 制造商:NXP Semiconductors 功能描述:MOSFET, N, SOT-223 制造商:NXP Semiconductors 功能描述:MOSFET N-Channel 55V 5.5A SOT223 |
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