參數(shù)資料
型號(hào): PHT6N03LT
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: TrenchMOS transistor Logic level FET
中文描述: 5.9 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: SOT-223, 4 PIN
文件頁數(shù): 4/6頁
文件大?。?/td> 53K
代理商: PHT6N03LT
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
PHT6N03LT
Fig.5. Typical output characteristics, T
j
= 25 C
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 C
R
DS(ON)
= f(I
D
); parameter V
GS
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
); conditions: V
DS
= 25 V; parameter T
j
Fig.8. Typical transconductance, T
= 25 C
g
fs
= f(I
D
); conditions: V
DS
= 25 V
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
); I
D
= 3.2 A; V
GS
= 5 V
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
0
2
4
6
8
10
0
10
20
30
40
50
60
BUK9830-30
VDS / V
ID / A
2.5
3
3.5
4
4.5
5
10
6
VGS / V =
0
10
20
30
ID / A
40
50
60
0
10
20
9830-30
gfs / S
Tj / C = 25
150
0
10
20
30
40
50
60
0
9830-30
4
ID / A
RDS(ON) / mOhm
10
20
30
40
50
60
VGS / V =
10
6
5
4.5
3.5
3
-50
0
50
100
150
0
0.5
1
1.5
2
SOT223 30V Trench
Tj / C
a
Normalised RDS(ON) = f(Tj)
0
1
2
3
4
5
6
0
10
20
30
40
50
60
9830-30
VGS / V
ID / A
Tj / C = 25
150
BUK959-60
-100
-50
0
50
100
150
200
0
0.5
1
1.5
2
2.5
Tj / C
VGS(TO) / V
max.
typ.
min.
January 1998
4
Rev 1.300
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