參數(shù)資料
型號(hào): PHP63NQ03LT
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: TrenchMOS logic level FET
中文描述: 68.9 A, 30 V, 0.0177 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁(yè)數(shù): 3/14頁(yè)
文件大?。?/td> 104K
代理商: PHP63NQ03LT
Philips Semiconductors
PHP/PHB/PHD63NQ03LT
TrenchMOS logic level FET
Product data
Rev. 01 — 14 June 2002
3 of 14
9397 750 09822
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature.
T
mb
= 25
°
C; I
DM
is single pulse; V
GS
= 10V.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa16
0
40
80
120
0
50
100
150
200
Tmb (
°
C)
Pder
(%)
03aa24
0
40
80
120
0
50
100
150
200
Tmb (
°
C)
Ider
(%)
P
der
P
tot 25 C
°
)
-----------------------
100
%
×
=
I
der
I
D 25 C
°
)
-------------------
100
%
×
=
03ai84
1
10
102
103
1
10
10
VDS (V)
ID
(A)
DC
Limit RDSon = VDS
/ ID
1 ms
tp
= 10
μ
s
100
μ
s
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