參數(shù)資料
型號(hào)： PHB65N06T
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： JFETs
英文描述： TrenchMOS transistor Standard level FET
中文描述： 63 A, 55 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC PACKAGE-3
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 68K
代理商： PHB65N06T
Philips Semiconductors
Product specification
TrenchMOS
transistor
Standard level FET
PHB65N06T
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel
standard level field-effect power
transistor
in
a
suitable for surface mounting. Using
’
trench
’
technology
featuresverylow on-state resistance
and has integral zener diodes giving
ESD protection up to 2kV. It is
intended
for
use
converters and
switching applications.
enhancement
mode
SYMBOL
PARAMETER
MAX.
UNIT
plastic envelope
V
DS
I
D
P
tot
T
j
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
55
63
150
175
18
V
A
W
C
m
the
device
V
GS
= 10 V
in
DC-DC
general purpose
PINNING - SOT404
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
mb
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
±
V
GS
I
D
I
D
I
DM
P
tot
T
stg
, T
j
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
CONDITIONS
-
R
GS
= 20 k
-
T
mb
= 25 C
T
mb
= 100 C
T
mb
= 25 C
T
mb
= 25 C
-
MIN.
-
-
-
-
-
-
-
- 55
MAX.
55
55
20
63
44
240
150
175
UNIT
V
V
V
A
A
A
W
C
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge capacitor
voltage, all pins
CONDITIONS
Human body model
(100 pF, 1.5 k
)
MIN.
-
MAX.
2
UNIT
kV
THERMAL RESISTANCES
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
TYP.
-
MAX.
1.0
UNIT
K/W
R
th j-a
Minimum footprint, FR4
board
50
-
K/W
d
g
s
1
3
mb
2
November 1997
1
Rev 1.100
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PHB65N06TT/R 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 63A I(D) | SOT-404
PHB66NQ03LT 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:N-channel TrenchMOS logic level FET
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PHB66NQ03LT,118 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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