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參數(shù)資料
| 型號(hào)： | PHP54N06T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 54 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁(yè)數(shù)： | 6/13頁(yè) |
| 文件大?。?/td> | 295K |
| 代理商： | PHP54N06T |
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Philips Semiconductors
PHP54N06T
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 — 14 February 2001
6 of 13
9397 750 08022
Philips Electronics N.V. 2001. All rights reserved.
Source-drain diode
V
SD
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
I
S
= 20 A; V
GS
= 0 V;
Figure 15
I
S
= 20 A;dI
S
/dt =
100 A/
μ
s
V
GS
=
10 V; V
DS
= 30 V
0.85
1.2
V
t
rr
Q
r
45
110
ns
nC
Table 5:
T
j
= 25
°
C unless otherwise specified
Symbol
Parameter
Characteristics
…continued
Conditions
Min
Typ
Max
Unit
T
j
= 25
°
C; t
p
= 300
μ
s
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C; I
D
= 25 A
Fig 6.
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
0
20
40
60
80
100
120
140
160
180
200
0
2
4
6
8
10
VDS (V)
ID
(A)
VGS (V) =
20
14
11
10
9.0
8.5
8.0
7.5
7.0
6.0
5.5
5.0
4.5
6.5
03nc63
03nc62
10
15
20
25
30
5
10
15
20
25
VGS (V)
RDSon
(m
)
03nc64
15
20
25
30
35
40
45
0
50
100
150
ID (A)
RDSon
(m
)
10
8
7
5.5
6
6.5
VGS (V) =
03aa28
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-60
-20
20
60
100
140
Tj (oC)
180
a
a
R
DSon 25 C
°
)
---------------------------
=
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| PHP55N03T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Standard level FET |
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