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參數(shù)資料
| 型號： | PHP54N06T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 54 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 2/13頁 |
| 文件大小： | 295K |
| 代理商： | PHP54N06T |
Philips Semiconductors
PHP54N06T
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 — 14 February 2001
2 of 13
9397 750 08022
Philips Electronics N.V. 2001. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Symbol Parameter
V
DS
drain-source voltage (DC)
I
D
drain current (DC)
P
tot
total power dissipation
T
j
junction temperature
R
DSon
drain-source on-state resistance
Quick reference data
Conditions
Typ
Max
55
54
118
175
Unit
V
A
W
°
C
T
mb
= 25
°
C; V
GS
= 10 V
T
mb
= 25
°
C
V
GS
= 10 V; I
D
= 25 A
T
j
= 25
°
C
T
j
= 175
°
C
17
20
40
m
m
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
DGR
drain-gate voltage (DC)
V
GS
gate-source voltage (DC)
I
D
drain current (DC)
Limiting values
Conditions
Min
Max
55
55
±
20
54
Unit
V
V
V
A
R
GS
= 20 k
T
mb
= 25
°
C; V
GS
= 10 V;
Figure 2
and
3
T
= 100
°
C; V
GS
= 10 V;
Figure 2
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
mb
= 25
°
C;
Figure 1
38
217
A
A
I
DM
peak drain current
P
tot
T
stg
T
j
Source-drain diode
I
S
source (diode forward) current (DC)
I
SM
peak source (diode forward) current
Avalanche ruggedness
W
DSS
non-repetitive avalanche energy
total power dissipation
storage temperature
operating junction temperature
55
55
118
+175
+175
W
°
C
°
C
T
mb
= 25
°
C
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s
54
217
A
A
unclamped inductive load; I
D
= 48 A;
V
DS
≤
55 V; V
GS
= 10 V; R
GS
= 50
;
starting T
mb
= 25
°
C
115
mJ
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