參數(shù)資料
型號: PHP54N06T
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel enhancement mode field-effect transistor
中文描述: 54 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁數(shù): 3/13頁
文件大?。?/td> 295K
代理商: PHP54N06T
Philips Semiconductors
PHP54N06T
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 — 14 February 2001
3 of 13
9397 750 08022
Philips Electronics N.V. 2001. All rights reserved.
V
GS
4.5 V
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature.
T
mb
= 25
°
C; I
DM
single pulse.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03na19
0
20
40
60
80
100
120
0
25
50
75
100
125
150
Tmb (oC)
175
200
Pder
(%)
03aa24
0
20
40
60
80
100
120
0
25
50
75
100
125
150
Tmb (oC)
175
200
Ider
(%)
P
der
P
tot 25 C
°
)
----------------------
100
%
×
=
I
der
I
D 25 C
°
)
------------------
100
%
×
=
03nc66
1
10
102
103
1
10
102
VDS (V)
ID
(A)
D.C.
100 ms
10 ms
RDSon = VDS/ ID
1 ms
tp = 10 us
100 us
tp
tp
T
T
P
t
δ
=
相關(guān)PDF資料
PDF描述
PHP55N03LTA N-channel enhancement mode field-effect transistor
PHB55N03LTA N-channel enhancement mode field-effect transistor
PHD55N03LTA N-channel enhancement mode field-effect transistor
PHP55N03T TrenchMOS transistor Standard Level FET(TrenchMOS 晶體管標(biāo)準(zhǔn)電平場效應(yīng)管)
PHP5N20E PowerMOS transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PHP54N06T,127 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHP55N03LT 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS transistor Logic level FET
PHP55N03LTA 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel enhancement mode field-effect transistor
PHP55N03LTA,127 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHP55N03T 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Standard level FET