參數(shù)資料
型號(hào)： PHP54N06T
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： JFETs
英文描述： N-channel enhancement mode field-effect transistor
中文描述： 54 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, SC-46, 3 PIN
文件頁(yè)數(shù)： 5/13頁(yè)
文件大?。?/td> 295K
代理商： PHP54N06T
Philips Semiconductors
PHP54N06T
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 — 14 February 2001
5 of 13
9397 750 08022
Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
T
j
= 25
°
C unless otherwise specified
Symbol
Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 0.25 mA; V
GS
= 0 V
T
j
= 25
°
C
T
j
=
55
°
C
55
50
V
V
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
T
j
= 25
°
C
T
j
= 175
°
C
T
j
=
55
°
C
V
DS
= 55 V; V
GS
= 0 V
T
j
= 25
°
C
T
j
= 175
°
C
V
GS
=
±
20 V; V
DS
= 0 V
V
GS
= 10 V; I
D
= 25 A;
Figure 7
and
8
T
j
= 25
°
C
T
j
= 175
°
C
2
1
3
4
4.4
V
V
V
I
DSS
drain-source leakage current
0.05
2
10
500
100
μ
A
μ
A
nA
I
GSS
R
DSon
gate-source leakage current
drain-source on-state
resistance
17
20
40
m
m
Dynamic characteristics
Q
g(tot)
total gate charge
Q
gs
gate-source charge
Q
gd
gate-drain (Miller) charge
C
iss
input capacitance
C
oss
output capacitance
C
rss
reverse transfer capacitance
t
d(on)
turn-on delay time
t
r
rise time
t
d(off)
turn-off delay time
t
f
fall time
L
d
internal drain inductance
V
DD
= 44 V; I
D
= 40 A;
V
GS
= 10 V;
Figure 14
36
8.4
11.5
1200
290
179
15
74
70
40
4.5
1592
356
240
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
V
GS
= 0 V; V
DS
= 25 V;
f = 1 MHz;
Figure 12
V
DD
= 30 V; R
L
= 1.2
;
V
GS
= 10 V; R
G
= 10
;
from drain lead 6 mm from
package to centre of die
from contact screw on
mounting base to centre of
die
from source lead to source
bond pad
3.5
nH
L
s
internal source inductance
7.5
nH
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