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參數(shù)資料
| 型號(hào)： | PHD24N03LT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 20 A, 30 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | PLASTIC, SC-63, DPAK-3 |
| 文件頁(yè)數(shù)： | 7/13頁(yè) |
| 文件大?。?/td> | 368K |
| 代理商： | PHD24N03LT |
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Philips Semiconductors
PHD24N03LT
N-channel enhancement mode field-effect transistor
Product specification
Rev. 02 — 27 July 2000
7 of 13
9397 750 07311
Philips Electronics N.V. 2000. All rights reserved.
I
D
= 1 mA; V
DS
= V
GS
Fig 10. Gate-source threshold voltage as a function of
junction temperature.
T
j
= 25
°
C; V
DS
= 5 V
Fig 11. Sub-threshold drain current as a function of
gate-source voltage.
T
j
= 25
°
C and 175
°
C; V
DS
>
I
D
×
R
DSon
Fig 12. Forward transconductance as a function of
drain current; typical values.
V
GS
= 0 V; f = 1 MHz
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03aa33
0
0.5
1
1.5
2
2.5
-60
-20
20
60
100
140
Tj (oC)
180
max
typ
min
VGS(th)
(V)
03aa36
0
0.5
1
1.5
2
2.5
3
max
typ
min
ID
VGS (V)
10-6
10-5
10-4
10-3
10-2
10-1
(A)
03ab03
0
2
4
6
8
10
12
14
16
18
20
0
5
10
15
20
25
30
35
40
45
50
ID(A)
gfs
(S)
Tj= 25oC
175oC
VDS> IDX RDSon
03ab05
102
103
104
10-1
1
10
102
VDS(V)
Ciss, Coss,
Crss(pF)
Ciss
Coss
Crss
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