- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄367938 > PHD24N03LT (NXP SEMICONDUCTORS) N-channel enhancement mode field-effect transistor PDF資料下載
參數(shù)資料
| 型號(hào)： | PHD24N03LT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 20 A, 30 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | PLASTIC, SC-63, DPAK-3 |
| 文件頁(yè)數(shù)： | 3/13頁(yè) |
| 文件大小： | 368K |
| 代理商： | PHD24N03LT |
第1頁(yè)第2頁(yè)當(dāng)前第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)
Philips Semiconductors
PHD24N03LT
N-channel enhancement mode field-effect transistor
Product specification
Rev. 02 — 27 July 2000
3 of 13
9397 750 07311
Philips Electronics N.V. 2000. All rights reserved.
V
GS
≥
5 V
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature.
T
mb
= 25
°
C; I
DM
is single pulse.
Unclamped inductive load; V
DD
≤
15 V; R
GS
= 50
;
V
GS
= 5 V; starting T
j
= 25
°
C and 150
°
C.
Fig 4.
Non-repetitive avalanche ruggedness current
as a function of pulse duration.
Fig 3.
Safe operating area; continuous and peak drain
currents as a function of drain-source voltage.
03aa16
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
Tmb (oC)
200
Pder
(%)
03aa24
0
20
40
60
80
100
120
Ider
(%)
0
25
50
75
100
125
150
Tmb (oC)
175
200
P
der
P
tot 25 C
°
)
----------------------
100
%
×
=
I
der
I
D 25 C
°
)
------------------
100
%
×
=
03aa99
1
10
102
1
10
102
VDS(V)
ID
(A)
D.C.
100 ms
10 ms
RDSon= VDS/ ID
1 ms
tp= 10
μ
s
100
μ
s
tp
tp
T
T
P
t
δ
=
03ab07
1
10
102
10-2
10-1
1
10
tp(ms)
IAS
(A)
T
j
prior to avalanche = 150
o
C
25oC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PHD32UCA | PHD32 Series . 32A Non-Isolated DC/DC Converter 5V, 3.3V Input Dual Output |
| PHD32VAA | PHD32 Series . 32A Non-Isolated DC/DC Converter 5V, 3.3V Input Dual Output |
| PHD32VAY | PHD32 Series . 32A Non-Isolated DC/DC Converter 5V, 3.3V Input Dual Output |
| PHD32VDA | PHD32 Series . 32A Non-Isolated DC/DC Converter 5V, 3.3V Input Dual Output |
| PHD32VDB | PHD32 Series . 32A Non-Isolated DC/DC Converter 5V, 3.3V Input Dual Output |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHD27NQ10T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS transistor |
| PHD2N50E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
| PHD2N60E | 制造商:NXP Semiconductors 功能描述:MOSFET N D-PAK |
| PHD3055E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS transistor |
| PHD3055E,118 | 功能描述:MOSFET N-CH TRNCH 60V 10.3A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。