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參數(shù)資料
| 型號： | PHD24N03LT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 20 A, 30 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | PLASTIC, SC-63, DPAK-3 |
| 文件頁數(shù)： | 6/13頁 |
| 文件大?。?/td> | 368K |
| 代理商： | PHD24N03LT |
Philips Semiconductors
PHD24N03LT
N-channel enhancement mode field-effect transistor
Product specification
Rev. 02 — 27 July 2000
6 of 13
9397 750 07311
Philips Electronics N.V. 2000. All rights reserved.
T
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C and 175
°
C; V
DS
>
I
D
×
R
DSon
Fig 7.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 6.
T
j
= 25
°
C
Fig 8.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 9.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ab00
0
5
10
15
20
25
30
35
40
45
50
0
0.2
0.4 0.6 0.8
1
1.2 1.4 1.6
1.8
2
VDS (V)
ID
(A)
2.8 V
2.6 V
2.4 V
Tj = 25oC
VGS = 10V
3 V
4 V
4.5 V
5 V
03ab02
0
5
10
15
20
25
30
35
40
45
50
0
1
2
3
4
5
6
7
8
9
10
VGS(V)
ID
(A)
VDS> IDX RDSon
Tj= 25oC
175oC
03ab01
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
0
5
10
15
20
25
30
35
40
45
50
ID(A)
RDSon
(
)
VGS= 10V
Tj= 25oC
5V
4.5 V
2.6 V
4 V
3V
2.8V
2.4 V
03aa27
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-60
-20
20
60
100
140
Tj (oC)
180
a
a
R
DSon 25 C
°
)
---------------------------
=
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