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參數(shù)資料
| 型號： | PHD24N03LT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 20 A, 30 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | PLASTIC, SC-63, DPAK-3 |
| 文件頁數(shù)： | 2/13頁 |
| 文件大?。?/td> | 368K |
| 代理商： | PHD24N03LT |
Philips Semiconductors
PHD24N03LT
N-channel enhancement mode field-effect transistor
Product specification
Rev. 02 — 27 July 2000
2 of 13
9397 750 07311
Philips Electronics N.V. 2000. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Symbol Parameter
V
DS
drain-source voltage (DC)
I
D
drain current (DC)
P
tot
total power dissipation
T
j
junction temperature
R
DSon
drain-source on-state resistance
Quick reference data
Conditions
T
j
= 25 to 175
°
C
T
mb
= 25
°
C; V
GS
= 10 V
T
mb
= 25
°
C
Typ
28
38
Max
30
20
37.5
175
50
56
Unit
V
A
W
°
C
m
m
V
GS
= 10 V; I
D
= 10 A
V
GS
= 5 V; I
D
= 10 A
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
DGR
drain-gate voltage (DC)
V
GS
gate-source voltage (DC)
V
GSM
peak gate-source voltage
I
D
drain current (DC)
Limiting values
Conditions
T
j
= 25 to 175
°
C
T
j
= 25 to 175
°
C; R
GS
= 20 k
Min
Max
30
30
±
15
±
20
20
Unit
V
V
V
V
A
t
p
≤
50
μ
s; pulsed; duty cycle = 25%
T
mb
= 25
°
C; V
GS
= 10 V;
Figure 2
and
3
T
mb
= 100
°
C; V
GS
= 10 V;
Figure 2
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
mb
= 25
°
C;
Figure 1
14
80
A
A
I
DM
peak drain current
P
tot
T
stg
T
j
Source-drain diode
I
S
source (diode forward) current (DC)
I
SM
peak source (diode forward) current
Avalanche ruggedness limiting values
E
AS
non-repetitive avalanche energy
total power dissipation
storage temperature
operating junction temperature
55
55
37.5
+175
+175
W
°
C
°
C
T
mb
= 25
°
C
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s
20
80
A
A
unclamped inductive load; I
D
= 19 A;
t
p
= 0.2 ms; V
DD
≤
15 V; R
GS
= 50
;
V
GS
= 5 V; starting T
j
= 25
°
C;
Figure 4
unclamped inductive load; V
DD
≤
15 V;
R
GS
= 50
; V
GS
= 5 V;
Figure 4
74
mJ
I
non-repetitive avalanche current
20
A
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