參數(shù)資料
型號: PHD24N03LT
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel enhancement mode field-effect transistor
中文描述: 20 A, 30 V, 0.056 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝: PLASTIC, SC-63, DPAK-3
文件頁數(shù): 4/13頁
文件大?。?/td> 368K
代理商: PHD24N03LT
Philips Semiconductors
PHD24N03LT
N-channel enhancement mode field-effect transistor
Product specification
Rev. 02 — 27 July 2000
4 of 13
9397 750 07311
Philips Electronics N.V. 2000. All rights reserved.
7.
Thermal characteristics
7.1 Transient thermal impedance
Table 4:
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to mounting
base
thermal resistance from junction to ambient
Conditions
mounted on a metal clad substrate;
Figure 5
mounted on a printed circuit board;
minimum footprint
Value
4
Unit
K/W
R
th(j-a)
50
K/W
Mounted on a metal clad substrate.
Fig 5.
Transient thermal impedance from junction to mounting base as a function of
pulse duration.
03aa98
10-2
10-1
1
10
10-5
10-4
10-3
10-2
10-1
1
10
tp(s)
Zth(j-mb)
(K/W)
single pulse
δ
= 0.5
0.2
0.1
0.05
0.02
tp
tp
T
T
P
t
δ
=
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