參數(shù)資料
型號(hào): PHB125N06LT
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: TrenchMOS transistor Logic level FET
中文描述: 75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, SOT-404, 3 PIN
文件頁(yè)數(shù): 7/8頁(yè)
文件大?。?/td> 70K
代理商: PHB125N06LT
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
PHB125N06LT
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
Fig.18. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
Fig.19. SOT404 : soldering pattern for surface mounting
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Epoxy meets UL94 V0 at 1/8".
11 max
4.5 max
1.4 max
10.3 max
0.5
15.4
2.5
0.85 max
(x2)
2.54 (x2)
17.5
11.5
9.0
5.08
3.8
2.0
December 1997
7
Rev 1.100
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PHB125N06T 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Standard level FET
PHB125N06TT/R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 75A I(D) | SOT-404
PHB129NQ04LT 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS logic level FET
PHB129NQ04LT /T3 功能描述:MOSFET N-CH TRENCH 40V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHB129NQ04LT,118 功能描述:MOSFET TRENCHMOS (TM) FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube