參數(shù)資料
型號(hào): PH3855L
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel TrenchMOS logic level FET
中文描述: 24 A, 55 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235
封裝: PLASTIC, LFPAK-4
文件頁(yè)數(shù): 8/12頁(yè)
文件大?。?/td> 83K
代理商: PH3855L
9397 750 13925
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 26 January 2005
8 of 12
Philips Semiconductors
PH3855L
N-channel TrenchMOS logic level FET
T
j
= 25
°
C and 175
°
C; V
GS
= 0 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
V
GS
= 0 V; f = 1 MHz
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03ar92
0
10
20
30
40
0
0.4
0.8
1.2
V
SD
(V)
I
S
(A)
T
j
= 25
°
C
175
°
C
03ar93
10
10
2
10
3
10
4
10
-1
1
10
10
2
V
DS
(V)
C
(pF)
C
iss
C
oss
C
rss
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