參數(shù)資料
型號: PH3855L
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel TrenchMOS logic level FET
中文描述: 24 A, 55 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235
封裝: PLASTIC, LFPAK-4
文件頁數(shù): 6/12頁
文件大?。?/td> 83K
代理商: PH3855L
9397 750 13925
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 26 January 2005
6 of 12
Philips Semiconductors
PH3855L
N-channel TrenchMOS logic level FET
T
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 5.
Fig 6.
T
j
= 25
°
C and 175
°
C; V
DS
> I
D
×
R
DSon
Fig 7.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ar88
0
10
20
30
40
0
0.5
1
1.5
2
V
DS
(V)
I
D
(A)
3.8
4
3.4
3
2.6
5
V
GS
(V) =
10
03ar89
0
20
40
60
80
0
10
20
30
40
I
D
(A)
R
DSon
(m
)
4
3.6
3.4
3.8
5
10
6
V
GS
(V) =
03ar90
0
5
10
15
20
0
1
2
3
4
V
GS
(V)
I
D
(A)
T
j
= 175
°
C
25
°
C
03aa28
0
0.6
1.2
1.8
2.4
-60
0
60
120
180
T
j
(
°
C)
a
a
R
DSon 25 C
)
------------------------------
=
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