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Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 26 January 2005
4 of 12
Philips Semiconductors
PH3855L
N-channel TrenchMOS logic level FET
5.
Thermal characteristics
Table 4:
Symbol Parameter
R
th(j-mb)
thermal resistance from junction to mounting base
Figure 4
Thermal characteristics
Conditions
Min
-
Typ
-
Max
3
Unit
K/W
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration.
03ar87
10
-2
10
-1
1
10
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
p
(s)
Z
th(j-mb)
(K/W)
single pulse
δ
= 0.5
0.2
0.1
0.05
0.02
t
p
T
P
t
t
p
T
δ
=