參數(shù)資料
型號(hào): PH2625L
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel TrenchMOS logic level FET
中文描述: 100 A, 25 V, 0.0041 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235
封裝: PLASTIC, LFPAK-4
文件頁(yè)數(shù): 7/13頁(yè)
文件大?。?/td> 100K
代理商: PH2625L
9397 750 14324
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 02 — 24 February 2005
7 of 13
Philips Semiconductors
PH2625L
N-channel TrenchMOS logic level FET
I
D
= 1 mA; V
DS
= V
GS
Gate-source threshold voltage as a function of
junction temperature
T
j
= 25
°
C; V
DS
= 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
Fig 9.
I
D
= 25 A; V
DS
= 4.5 V, 12 V and 19 V
Fig 11. Gate-source voltage as a function of gate
charge; typical values
Fig 12. Gate charge waveform definitions
03aa33
0
0.5
1
1.5
2
2.5
-60
0
60
120
180
T
j
(
°
C)
V
GS(th)
(V)
max
typ
min
03aa36
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
I
D
(A)
0
1
2
3
V
GS
(V)
max
typ
min
003aaa558
0
2
4
6
8
10
0
20
40
60
80
Q
G
(nC)
V
GS
(V)
V
DS
(V) = 4.5
12
19
003aaa508
V
GS
V
GS(th)
Q
gs1
Q
gs2
gd
V
DS
Q
g(tot)
I
D
Q
gs
V
plat
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