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參數(shù)資料
| 型號(hào)： | PH2729-150M |
| 英文描述： | Radar Pulsed Power Transistor-150 Watts 2.7-2.9 GHz, 100ms Pulse, 10% Duty |
| 中文描述： | 雷達(dá)脈沖功率晶體管，150瓦2月7日至二月九號(hào)千兆赫，100ms的脈沖，10％的稅 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 79K |
| 代理商： | PH2729-150M |
Features
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Efficiency Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metallization System
Internal Input and Output Impedance Matching
Hermetic Metal/Ceramic Package
Outline Drawing
1
Notes: (unless otherwise specified)
1. Tolerances are: inches ± .005” (millimeters ± 0.13mm)
Electrical Specifications at 25°C
=
Symbol
BV
CES
Collector-Emitter Breakdown Voltage
I
CES
Collector-Emitter Leakage Current
RTH
(JC)
Thermal Resistance
P
OUT
Output Power
G
P
Power Gain
η
Collector Efficiency
RL
Input Return Loss
OD-S
Overdrive Stability (Osc.)
VSWR-T
Load Mismatch Tolerance
VSWR-S
Load Mismatch Stability
Absolute Maximum Rating at 25°C
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Power Dissipation
Storage Temperature
Junction Temperature
Description
M/A-COM’s PH2729-150M is a silicon bipolar NPN transistor
specifically designed for use in high efficiency, common base,
Class C microwave power amplifiers. It is ideally suited for S-
Band radar and pulsed power applications where the highest
gain and saturated power are required. The flanged ceramic
package provides for excellent thermal and hermetic properties,
which when combined with M/A-COM’s mature transistor fab-
rication technology results in the highest reliability available.
Symbol
V
CES
V
EBO
I
C
P
D
T
STG
T
J
Rating
65
3.0
15.0
500
-65 to +200
200
Units
V
V
A
W
°C
°C
Parameter
Test Conditions
Min
65
-
-
150
38
10
-
-
-
Max
-
7.5
0.4
-
-
-
-
60
2:1
1.5:1
Units
V
mA
°C/W
W
dB
%
dB
dBc
-
-
I
C
= 40 mA
V
CE
= 38 V
V
CC
= 38 V, P
IN
= 22 W, f = 2.7, 2.8, 2.9 GHz
V
CC
= 38 V, P
IN
= 22 W, f = 2.7, 2.8, 2.9 GHz
V
CC
= 38 V, P
IN
= 22 W, f = 2.7, 2.8, 2.9 GHz
V
CC
= 38 V, P
IN
= 22 W, f = 2.7, 2.8, 2.9 GHz
V
CC
= 38 V, P
IN
= 22 W, f = 2.7, 2.8, 2.9 GHz
V
CC
= 38 V, P
IN
= 27.5 W, f = 2.7, 2.8, 2.9 GHz
V
CC
= 38 V, P
IN
= 22 W, f = 2.7, 2.8, 2.9 GHz
V
CC
= 38 V, P
IN
= 22 W, f = 2.7, 2.8, 2.9 GHz
Radar Pulsed Power Transistor—150 Watts
2.7-2.9 GHz, 100μs Pulse, 10% Duty
PH2729-150M
North America:
Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Specifications subject to change without notice.
Visit www.macom.com for additional data sheets and product information.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PH2729-150M_07 | 制造商:MA-COM 制造商全稱(chēng):M/A-COM Technology Solutions, Inc. 功能描述:Radar Pulsed Power Transistor 150W, 2.7-2.9 GHz, 100μs Pulse, 10% Duty |
| PH2729-180M | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:TRANSISTOR | BJT | NPN | 63V V(BR)CEO | 18A I(C) | FO-91VAR |
| PH2729-25M | 功能描述:射頻雙極電源晶體管 RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| PH2729430M | 制造商:MA-COM 制造商全稱(chēng):M/A-COM Technology Solutions, Inc. 功能描述:Radar Pulsed Power Transistor, 13OW, IOOps Pulse, 10% Duty 2.7 - 2.9 GHz |
| PH2729-5M | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:TRANSISTOR | BJT | NPN | 63V V(BR)CEO | 1.1A I(C) | FO-91VAR |
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