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參數(shù)資料
| 型號： | PH2729-25M |
| 英文描述： | RADAR PULSED POWER TRANSISTOR 25 WATTS, 2.70-2.90 GHz, 100ms PULSE, 10% DUTY |
| 中文描述： | 雷達(dá)脈沖功率晶體管25瓦，2.70-2.90千兆赫，100ms的脈沖，10％的稅 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 99K |
| 代理商： | PH2729-25M |
M/A-COM PHI, INC.
PH2729-25M
RADAR PULSED POWER TRANSISTOR
25 WATTS, 2.70-2.90 GHz, 100
μ
s PULSE, 10% DUTY
FEATURES
OUTLINE DRAWING
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Efficiency Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input and Output Impedance Matching
Hermetic Metal/Ceramic Package
ABSOLUTE MAXIMUM RATINGS AT 25°C
Parameter
Symbol
Rating
Collector-Emitter Voltage
VCES
65
Emitter-Base Voltage
VEBO
3.0
Collector Current (Peak)
IC
4.0
Total Power Dissipation
@ +25°C
Storage Temperature
TSTG
-65 to +200
Junction Temperature
Tj
200
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Symbol
Min
Collector-Emitter Breakdown
Voltage
Collector-Emitter Leakage
Current
Thermal Resistance
RTH(JC)
-
Output Power
PO
25
Power Gain
GP
9.2
Collector Efficiency
η
45
Input Return Loss
RL
6
Load Mismatch Tolerance
VSWR-T
-
Load Mismatch Stability
VSWR-S
-
Units
V
V
A
PTOT
120
W
°C
°C
Max
-
Units
V
Test Conditions
BVCES
65
IC=10mA
ICES
-
1.5
mA
VCE=40V
1.25
-
-
-
°C/W
W
dB
%
VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz
VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz
VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz
VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz
VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz
VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz
VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz
-
dB
-
-
3:1
1.5:1
BROADBAND TEST FIXTURE IMPEDANCE
F (GHz)
Z IF (
)
2.70
38 - j14.4
2.80
35 - j16.3
2.90
33 - j17.8
M/A-COM POWER HYBRIDS OPERATION
1742 CRENSHAW BLVD
TORRANCE, CA 90501
(310) 320-6160
FAX (310) 618-9191
Z OF (
)
17.1 - j8.7
15.0 - j8.7
13.3 - j8.3
TEST FIXTURE
INPUT
CIRCUIT
ZIF
TEST FIXTURE
OUTPUT
CIRCUIT
ZOF
50
50
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