參數(shù)資料
型號(hào): PH2625L
廠(chǎng)商: NXP SEMICONDUCTORS
元件分類(lèi): JFETs
英文描述: N-channel TrenchMOS logic level FET
中文描述: 100 A, 25 V, 0.0041 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235
封裝: PLASTIC, LFPAK-4
文件頁(yè)數(shù): 3/13頁(yè)
文件大?。?/td> 100K
代理商: PH2625L
9397 750 14324
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Preliminary data sheet
Rev. 02 — 24 February 2005
3 of 13
Philips Semiconductors
PH2625L
N-channel TrenchMOS logic level FET
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature
T
mb
= 25
°
C; I
DM
is single pulse; V
GS
= 10 V
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Fig 3.
03aa15
0
40
80
120
0
50
100
150
200
T
mb
P
der
(%)
(
°
C)
03aa23
0
40
80
120
0
50
100
150
200
(%)
I
der
T
mb
(
°
C)
P
der
P
tot 25 C
)
------------------------
100
%
×
=
I
der
I
D 25 C
°
)
--------------------
100
%
×
=
003aaa551
1
10
10
2
10
3
10
-1
1
10
10
2
V
DS
(V)
I
D
(A)
DC
100 ms
10 ms
1 ms
Limit R
DSon
= V
DS
/ I
D
t
p
= 10
μ
s
100
μ
s
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